Gallium nitride single crystal (GaN) is difficult to achieve high-efficiency and low-damage
machining due to anisotropy, high hardness and brittleness. Nanoscratch tests of GaN …

Surface nanotribological properties and subsurface damage of flat and textured gallium
nitride (GaN) substrates during both linear and circular nanoscratching processes are …

Gallium nitride (GaN) is a hard and brittle single crystal and shaping it into thin substrates for
semiconductor applications is challenging. The quality of the machined surface can vary …

A series of three-dimensional molecular dynamics (MD) simulations was performed to
investigate the effect of temperature on the nanoscale deformation behaviour and …

Molecular dynamics (MD) were utilized to explore the damage of gallium nitride (GaN) in
nanogrinding at a wide range of initial temperature (100–1000 K). The focus is on the …

In this study, the deformation mechanism of gallium-faces (Ga-faces) and nitrogen-faces (N-
faces) gallium nitride (GaN) during nanogrinding were investigated by molecular dynamics …

Indentation test is a powerful method of material characterization for measuring and
extracting mechanical properties at small scales with a long history and wide range of …

In order to investigate the tribological property of the gallium nitride (GaN) crystal at the
nanoscale, a series of molecular dynamics nanoscratch simulations are carried out on the …

Molecular dynamics (MD) simulation of nanoindentation was conducted to study the
indentation of sphalerite gallium nitride (B3-GaN) according to different radius spherical …

Molecular dynamics (MD) simulation was used to systemically investigate the
nanoindentation process of GaN. Different loading orientations and indenter radii were …