Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …

Low-cost, less-toxic, and abundantly-produced Ge1− xSnx alloys are an interesting class of
narrow energy-gap semiconductors that received noteworthy interest in optical technologies …

Highly oriented Ge0. 81Sn0. 19 nanowires have been synthesized by a low-temperature
chemical vapor deposition growth technique. The nanostructures form by a self-seeded …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

We report for the first time the self-catalyzed, single-step growth of branched GeSn
nanostructures by a vapor–liquid–solid mechanism. These typical GeSn nanostructures …

Strain engineering in Sn-rich group IV semiconductors is a key enabling factor to exploit the
direct bandgap at mid-infrared wavelengths. Here, we investigate the effect of strain on the …

The growth of Sn-rich group-IV semiconductors at the nanoscale can enrich the
understanding of the fundamental properties of metastable GeSn alloys. Here, we …

A low-temperature chemical vapor growth of Ge nanowires using Ga as seed material is
demonstrated. The structural and chemical analysis reveals the homogeneous incorporation …

The thermal stability of GeSn epitaxial thin films was investigated via in situ transmission
electron microscopy (TEM). Samples were grown with a similar layer structure and 10 at …

Ge1–x Sn x alloy nanocrystals (NCs) are a class of semiconductors that show interesting
(photo) physical properties such as composition-dependent visible to near-IR energy gaps …