" Nature performs not hing vainly, and makes nothing unnecessary" Aristotle Interest in the
passage of charged particles through crystals first appeared at the beginning of this century …

Ion implantation offers one of the best examples of a topic that starting from the basic
research level has reached the high technology level within the framework of …

Ion implantation in silicon with doses below the amorphization threshold can lead to the
formation of dislocations after high-temperature annealing. We have studied this for implants …

The mechanisms by which ion irradiation influences atomic transport are reviewed,
including cascade mixing, enhanced diffusion via mobile point defects, rapid diffusion along …

The structural and compositional changes in ion‐implanted and annealed Hg1− x Cd x Te
(x= 0.21; 0.29) were studied by means of ion‐beam probing techniques. Rutherford …

Trapping of D atoms implanted in W and Mo single crystals was investigated in connection
with the implantation-induced defects by using ion beam analysis techniques. The amount of …

Retention and thermal release of D atoms and lattice disorder in W single crystals pre-
irradiated with He were studied by ion beam analysis techniques. The retention of 1 keV D …

Retention and thermal release of deuterium implanted in W with various carbon contents
were studied by ion beam analysis techniques. The correlation between implantation …

Elemental Analysis by Particle Accelerators describes the theory, methodology, and
applications for a wide variety of sensitive, non-destructive methods of analysis capable of …

An anomalous muonium state similar to that in silicon has been found in germanium. This
state can be described an anisotropic hyperfine interaction with the parameters A⊥ h …