Passive resonant sensors: trends and future prospects

H Hallil, C Dejous, S Hage-Ali, O Elmazria… - IEEE Sensors …, 2021 - ieeexplore.ieee.org
Sensors based on “resonance phenomenon” span a broad spectrum of important current
applications including detection of biological and chemical agents, and measurements of …

A chip-less and battery-less subharmonic tag for wireless sensing with parametrically enhanced sensitivity and dynamic range

HME Hussein, M Rinaldi, M Onabajo, C Cassella - Scientific reports, 2021 - nature.com
Massive deployments of wireless sensor nodes (WSNs) that continuously detect physical,
biological or chemical parameters are needed to truly benefit from the unprecedented …

Impact of nuclear reactor radiation on the performance of AlN/sapphire surface acoustic wave devices

Y Wang, G Sha, C Harlow, M Yazbeck… - Nuclear Instruments and …, 2020 - Elsevier
The performance of an AlN/sapphire surface acoustic wave (SAW) delay line device was
characterized in real time under irradiation inside a nuclear reactor. Both its resonant …

AlN/GaN/Sapphire heterostructure for high-temperature packageless acoustic wave devices

F Bartoli, T Aubert, M Moutaouekkil, J Streque… - Sensors and Actuators A …, 2018 - Elsevier
Surface acoustic waves (SAW) technology is very promising to achieve wireless sensors
able to operate in high temperature environments up to possibly 1000° C. However, there is …

AlN/IDT/AlN/sapphire SAW heterostructure for high-temperature applications

O Legrani, T Aubert, O Elmazria… - IEEE Transactions …, 2016 - ieeexplore.ieee.org
Recent studies have evidenced that Pt/AlN/Sapphire surface acoustic wave (SAW) devices
are promising for high-temperature high-frequency applications. However, they cannot be …

An experimental and theoretical study of impact of device parameters on performance of AlN/sapphire-based SAW temperature sensors

H Lv, Y Huang, Y Ai, Z Liu, D Lin, Z Cheng, L Jia, B Guo… - Micromachines, 2021 - mdpi.com
The impact of device parameters, including AlN film thickness (h AlN), number of interdigital
transducers (N IDT), and acoustic propagation direction, on the performance of c-plane …

Method of the out-of-band rejection improvement of the AlN based surface acoustic wave filters

S Yang, Y Ai, Z Cheng, L Zhang, L Jia, B Dong… - Ultrasonics, 2019 - Elsevier
AlN based surface acoustic wave (SAW) filters with an acoustic wavelength (λ) of 8 µm have
been fabricated based on sputtered AlN films on sapphire. The acoustic velocity of 1-µm …

Impact of device parameters on performance of one-port type SAW resonators on AlN/sapphire

S Yang, Y Ai, Y Zhang, Z Cheng, L Zhang… - Journal of …, 2018 - iopscience.iop.org
We have studied the impact of various device parameters including surface acoustic
wavelength (λ), interdigital transducers (IDT) finger apertures (L IDT), number of reflector …

Study of Acoustic Emission from the Gate of Gallium Nitride High Electron Mobility Transistors

BK Paszkiewicz, B Paszkiewicz, A Dziedzic - Electronics, 2024 - mdpi.com
Nitrides are the leading semiconductor material used for the fabrication of high electron
mobility transistors (HEMTs). They exhibit piezoelectric properties, which, coupled with their …

Investigations of AlN thin film crystalline properties in a wide temperature range by in situ x-ray diffraction measurements: Correlation with AlN/sapphire-based SAW …

KA Aïssa, O Elmazria, P Boulet, T Aubert… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
Aluminum nitride on sapphire is a promising substrate for SAW sensors operating at high
temperatures and high frequencies. To get a measure of the suitability and temperature …