Three-sensor 3ω-2ω method for the simultaneous measurement of thermal conductivity and thermal boundary resistance in film-on-substrate heterostructures

G Yang, B Cao - Journal of Applied Physics, 2023 - pubs.aip.org
Solid heterostructures composed of substrates and epitaxial films are extensively used in
advanced technologies, and their thermophysical properties fundamentally determine the …

Inversion of optical constants of natural silk fibers based on FDTD-PSO and scattering experiments

Z Tao, J Qiu - Journal of Quantitative Spectroscopy and Radiative …, 2025 - Elsevier
The optical constants of fiber materials are of great value in the study of the mechanism and
application of radiation regulation, but the conventional methods for obtaining the optical …

Polarization measurement method based on liquid crystal variable retarder (LCVR) for atomic thin-film thickness

Y Yuan, C Yao, W Shen, X Hu, C Hu - Nanomanufacturing and Metrology, 2022 - Springer
Atomic thickness thin films are critical functional materials and structures in atomic and close-
to-atomic scale manufacturing. However, fast, facile, and highly sensitive precision …

Air Nanocolumn-SiO2 composite film with adjustable anisotropic refractive index

W Wang, J Gao, H Hu, Y Jiang, H Wu, X Li, X Li… - Materials Today …, 2022 - Elsevier
Low refractive index (RI) porous dielectrics at optical frequencies, serving as subwavelength
effective media for versatile photonic utilization, still face great challenges in realizing …

Spectro-ellipsometric probing of wetting, nucleation, and dot/island formation during photo-excited chemical vapor deposition of Ge on SiO2 substrate

H Akazawa - Journal of Vacuum Science & Technology B, 2022 - pubs.aip.org
The morphological evolution of Ge layers growing on the SiO 2/Si (100) substrate by photo-
excited chemical vapor deposition was traced through an analysis of pseudodielectric …

Spectro-ellipsometric modeling and optimization of two-dimensional Ge layer and three-dimensional Ge dot/island structures on SiO2 substrates

H Akazawa - Japanese Journal of Applied Physics, 2021 - iopscience.iop.org
Morphological structures of two-dimensional (2D) Ge thin films and three-dimensional (3D)
Ge dots/islands grown on SiO 2 substrates were analyzed with UV–visible spectroscopic …

[PDF][PDF] Calculation of Optical Coefficients and Thickness of TiO2. Thin Film Using the Single Wavelength Ellipsometry Method

D Raoufi - Iranian Journal of Applied Physics, 2020 - jap.alzahra.ac.ir
The optical coefficients and thickness of thin films are essential parameters in many
branches of science and technology. Ellipsometry is a well-known and powerful technique …

مقالۀ پژوهشی: محاسبۀ ضرایب اپتیکی و ضخامت لایۀنازک دی‌اکسید تیتانیم با استفاده از روش بیضی‌سنجی تکفام

رئوفی, داود - فیزیک کاربردی ایران, 2020‎ - jap.alzahra.ac.ir
ضرایب اپتیکی و ضخامت لایه‌های نازک در بسیاری از شاخه‌های علوم و فناوری پارامترهای اساسی
محسوب می‌شوند. بیضی‌سنجی روش شناخته‌شده و قدرتمندی برای محاسبۀ پارامترهای اساسی لایه‌های …