Physical and chemical mechanisms in oxide-based resistance random access memory
KC Chang, TC Chang, TM Tsai, R Zhang… - Nanoscale research …, 2015 - Springer
In this review, we provide an overview of our work in resistive switching mechanisms on
oxide-based resistance random access memory (RRAM) devices. Based on the …
oxide-based resistance random access memory (RRAM) devices. Based on the …
Emerging memory electronics for non-volatile radiofrequency switching technologies
Radiofrequency (RF) switches are pervasive in modern communication and connectivity
systems such as cellular networks, satellite communications and radar systems …
systems such as cellular networks, satellite communications and radar systems …
Insights into synaptic functionality and resistive switching in lead iodide flexible memristor devices
Neuromorphic platforms are gaining popularity due to their superior efficiency, low power
consumption, and adaptable parallel signal processing capabilities, overcoming the …
consumption, and adaptable parallel signal processing capabilities, overcoming the …
A flexible organic resistance memory device for wearable biomedical applications
Y Cai, J Tan, L YeFan, M Lin, R Huang - Nanotechnology, 2016 - iopscience.iop.org
Parylene is a Food and Drug Administration (FDA)-approved material which can be safely
used within the human body and it is also offers chemically inert and flexible merits. Here …
used within the human body and it is also offers chemically inert and flexible merits. Here …
Bulk Oxygen–Ion Storage in Indium–Tin–Oxide Electrode for Improved Performance of HfO2-Based Resistive Random Access Memory
Indium-tin-oxide (ITO) is investigated as the top electrode material in HfO 2-based resistive
random access memory cells. Experimental results show that in contrast to a metal (Pt) …
random access memory cells. Experimental results show that in contrast to a metal (Pt) …
A method to reduce forming voltage without degrading device performance in hafnium oxide-based 1T1R resistive random access memory
In this paper, we discover an operation method that can effectively decrease the forming
voltage in resistance random access memory (RRAM). Forming voltage can be reduced by …
voltage in resistance random access memory (RRAM). Forming voltage can be reduced by …
Complementary resistive switching behavior induced by varying forming current compliance in resistance random access memory
YT Tseng, TM Tsai, TC Chang, CC Shih… - Applied Physics …, 2015 - pubs.aip.org
In this study of resistance random access memory in a resistive switching film, the
breakdown degree was controlled by varying forming current compliance. A SiO x layer was …
breakdown degree was controlled by varying forming current compliance. A SiO x layer was …
Resistive switching mechanism of oxygen-rich indium tin oxide resistance random access memory
TM Tsai, KC Chang, TC Chang, R Zhang… - IEEE Electron …, 2016 - ieeexplore.ieee.org
This letter investigates the double-ended resistive switching characteristics of indium tin
oxide (ITO) resistance random access memory (RRAM). Resistive switching can be …
oxide (ITO) resistance random access memory (RRAM). Resistive switching can be …
Exploiting intrinsic variability of filamentary resistive memory for extreme learning machine architectures
In this paper, we show for the first time how unavoidable device variability of emerging
nonvolatile resistive memory devices can be exploited to design efficient low-power, low …
nonvolatile resistive memory devices can be exploited to design efficient low-power, low …
Galvanic effect of Au–Ag electrodes for conductive bridging resistive switching memory
We presented the galvanic effect of Au-Ag electrode in a conductive bridging resistive
switching memory. Because of the different chemical activities between Au and Ag metals …
switching memory. Because of the different chemical activities between Au and Ag metals …