Vertical Schottky contacts to bulk GaN single crystals and current transport mechanisms: A review
H Kim - Journal of Electronic Materials, 2021 - Springer
Wide band gap III-nitride materials have gained considerable attention as promising
semiconductor materials for light-emitting photonic diodes and high-frequency/power …
semiconductor materials for light-emitting photonic diodes and high-frequency/power …
Numerical investigations of nanowire gate-all-around negative capacitance GaAs/InN tunnel FET
We demonstrated a nanowire gate-all-around (GAA) negative capacitance (NC) tunnel field-
effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In the …
effect transistor (TFET) based on the GaAs/InN heterostructure using TCAD simulation. In the …
A novel 4H–SiC thermal neutron detector based on a metal-oxide-semiconductor structure
XD Meng, YC Han, L Ren, LX Zhang, C Peng… - Nuclear Instruments and …, 2024 - Elsevier
Energy resolution and leakage current are two key parameters for semiconductor neutron
detectors. Metal-Oxide-Semiconductor (MOS) detectors introduce an additional oxide layer …
detectors. Metal-Oxide-Semiconductor (MOS) detectors introduce an additional oxide layer …
Performance comparison of 2D mono-elemental (X-enes) armchair nanoribbon Schottky barrier Field Effect Transistors
RC Junghare, GC Patil - IEEE Transactions on Nanotechnology, 2024 - ieeexplore.ieee.org
In this work, comprehensive analysis of Schottky barrier (SB) field effect transistors (FETs)
having 2D mono-elemental (X-enes) nanoribbon (NR) with width of 10 dimers along the …
having 2D mono-elemental (X-enes) nanoribbon (NR) with width of 10 dimers along the …
Performance Analysis of Graphene/AlxGa1-xN Schottky Contact at Elevated Temperature
The performances of graphene/Al_xGa_1-xN contacts have been analyzed for the
temperature range of 300 to 500 K. Analytical investigation shows that for all the …
temperature range of 300 to 500 K. Analytical investigation shows that for all the …