Emerging trends in wide band gap semiconductors (SiC and GaN) technology for power devices
Among the wide band gap (WBG) semiconductors, silicon carbide (4H-SiC) and gallium
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
nitride (GaN) are nowadays recognized as outstanding materials for the future of power …
Review of technology for normally-off HEMTs with p-GaN gate
Owing to the high carrier density and high electron mobility of the two dimensional electron
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
gas (2DEG), high electron mobility transistors (HEMTs) based on gallium nitride (GaN) are …
Reliability, applications and challenges of GaN HEMT technology for modern power devices: A review
N Islam, MFP Mohamed, MFAJ Khan, S Falina… - Crystals, 2022 - mdpi.com
A new generation of high-efficiency power devices is being developed using wide bandgap
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
(WBG) semiconductors, like GaN and SiC, which are emerging as attractive alternatives to …
Selective doping in silicon carbide power devices
Silicon carbide (SiC) is the most mature wide band-gap semiconductor and is currently
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
employed for the fabrication of high-efficiency power electronic devices, such as diodes and …
Ion implantation doping in silicon carbide and gallium nitride electronic devices
Wide band gap semiconductors such as silicon carbide (SiC) and gallium nitride (GaN) are
excellent materials for the next generation of high-power and high-frequency electronic …
excellent materials for the next generation of high-power and high-frequency electronic …
Physical unclonable anticounterfeiting electrodes enabled by spontaneously formed plasmonic core–shell nanoparticles for traceable electronics
Q Li, F Chen, J Kang, J Su, F Huang… - Advanced Functional …, 2021 - Wiley Online Library
Counterfeit electronics are a growing problem for the electronic information industry
worldwide, so developing unbreakable security tags is crucial to ensure the trustworthiness …
worldwide, so developing unbreakable security tags is crucial to ensure the trustworthiness …
Superhigh out-of-plane piezoelectricity, low thermal conductivity and photocatalytic abilities in ultrathin 2D van der Waals heterostructures of boron monophosphide …
A stable 2D van der Waals (vdW) heterobilayer, constituted by boron monophosphide (BP)
and Gallium Nitride (GaN) monolayers, has been explored for different kinds of energy …
and Gallium Nitride (GaN) monolayers, has been explored for different kinds of energy …
The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
Tunneling current through non-alloyed metal/heavily-doped SiC interfaces
In this paper, tunneling phenomena at metal/heavily-doped SiC Schottky (non-sintered)
interfaces are reviewed, and a design guideline for low-resistance non-alloyed SiC ohmic …
interfaces are reviewed, and a design guideline for low-resistance non-alloyed SiC ohmic …
Effect of sintering conditions on the mechanical strength of Cu-sintered joints for high-power applications
JW Yoon, JH Back - Materials, 2018 - mdpi.com
In this study, the feasibility of low-cost Cu-sintering technology for power electronics
packaging and the effect of sintering conditions on the bonding strength of the Cu-sintered …
packaging and the effect of sintering conditions on the bonding strength of the Cu-sintered …