Optical-phonon behavior in The role of microscopic strains and ionic plasmon coupling
We present an experimental and theoretical investigation of long-wavelength optical-
phonon behavior in Ga 1− x In x As alloys. We propose a model which accounts …
phonon behavior in Ga 1− x In x As alloys. We propose a model which accounts …
[HTML][HTML] Growth, structural and optical properties of coherent κ-(AlxGa1− x) 2O3/κ-Ga2O3 quantum well superlattice heterostructures
M Kneiß, P Storm, A Hassa, D Splith… - APL Materials, 2020 - pubs.aip.org
High quality heteroepitaxial (001)-oriented κ-(Al x Ga 1− x) 2 O 3/κ-Ga 2 O 3 quantum well
superlattice heterostructures were deposited by tin-assisted pulsed laser deposition on c …
superlattice heterostructures were deposited by tin-assisted pulsed laser deposition on c …
Dilute GaAs1− xBix epilayers with different bismuth concentrations grown by Molecular Beam Epitaxy: A promising candidate for gamma radiation sensor applications
Radiation interaction studies are very important for exploring the technological applications
of new materials in radiation environments. This work reports the effect of gamma radiation …
of new materials in radiation environments. This work reports the effect of gamma radiation …
Growth and Dark Current Analysis of GaSb- and InP-Based Metamorphic In0.8Ga0.2As Photodetectors
P Cao, T Wang, H Peng, Q Zhuang, W Zheng - Materials, 2023 - mdpi.com
Short-wavelength infrared photodetectors based on metamorphic InGaAs grown on GaSb
substrates and InP substrates are demonstrated. The devices have a pBn structure that …
substrates and InP substrates are demonstrated. The devices have a pBn structure that …
Thermoelectric properties of Zn-doped In0.95Ga0.05Sb crystals grown by directional solidification
Thermoelectric devices require p-type and n-type semiconductors with similar chemical,
mechanical and thermoelectric properties to achieve maximum efficiency. To match with n …
mechanical and thermoelectric properties to achieve maximum efficiency. To match with n …
Effective suppression of antiphase domains in GaP (N)/GaP heterostructures on Si (001)
III–V planar semiconductor heterostructures based on GaPN alloy with a nitrogen
concentration up to 2.12% were grown on Si (001) by plasma assisted molecular beam …
concentration up to 2.12% were grown on Si (001) by plasma assisted molecular beam …
Influence of substrate misorientation on the photoluminescence and structural properties of InGaAs/GaAsP multiple quantum wells
H Dong, J Sun, S Ma, J Liang, T Lu, X Liu, B Xu - Nanoscale, 2016 - pubs.rsc.org
InGaAs/GaAsP multiple quantum wells (MQWs) were grown by metal–organic chemical
vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and …
vapor deposition on vicinal GaAs (001) substrates with different miscut angles of 0°, 2° and …
Structural and optical properties of BaTiO3 ultrathin films
Using laser molecular beam epitaxy technique, BaTiO 3 ultrathin films of 7, 12, 25, 750
monolayer (ML) thicknesses were obtained on MgO substrates. The effect of reducing the …
monolayer (ML) thicknesses were obtained on MgO substrates. The effect of reducing the …
Residual strain measurements in InGaAs metamorphic buffer layers on GaAs
V Bellani, C Bocchi, T Ciabattoni, S Franchi… - The European Physical …, 2007 - Springer
This work deals with the strain relaxation mechanism in InGaAs metamorphic buffers (MBs)
grown on GaAs substrates and overgrown by InAs quantum dots (QD). The residual strain is …
grown on GaAs substrates and overgrown by InAs quantum dots (QD). The residual strain is …
Anisotropy of optical phonons in biaxially stressed zinc-blende-and diamond-type semiconductors and alloys
VA Volodin, VA Sachkov - Physica B: Condensed Matter, 2021 - Elsevier
The splitting of long-wave optical phonons that arises in biaxially stressed zinc-blende-and
diamond-type crystals due to violation of cubic symmetry in such crystals was studied both …
diamond-type crystals due to violation of cubic symmetry in such crystals was studied both …