III-nitride semiconductor lasers grown on Si
M Feng, J Liu, Q Sun, H Yang - Progress in Quantum Electronics, 2021 - Elsevier
III-nitride semiconductor laser directly grown on Si is a potential on-chip light source for Si
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
photonics. Moreover, it may greatly lower the manufacture cost of laser diodes and further …
The 2020 UV emitter roadmap
Solid state UV emitters have many advantages over conventional UV sources. The (Al, In,
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Ga) N material system is best suited to produce LEDs and laser diodes from 400 nm down to …
Dopants and defects in ultra-wide bandgap semiconductors
Ultra-wide bandgap semiconductors, with bandgaps greater than 3.5 eV, have immense
potential in power-switching electronic applications and ultraviolet light emitters. But the …
potential in power-switching electronic applications and ultraviolet light emitters. But the …
[HTML][HTML] On compensation in Si-doped AlN
Controllable n-type doping over wide ranges of carrier concentrations in AlN, or Al-rich
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
AlGaN, is critical to realizing next-generation applications in high-power electronics and …
[HTML][HTML] Toward the predictive discovery of ambipolarly dopable ultra-wide-band-gap semiconductors: The case of rutile GeO2
Ultrawide-band-gap (UWBG) semiconductors are promising for fast, compact, and energy-
efficient power-electronics devices. Their wider band gaps result in higher breakdown …
efficient power-electronics devices. Their wider band gaps result in higher breakdown …
[HTML][HTML] Correlation between mobility collapse and carbon impurities in Si-doped GaN grown by low pressure metalorganic chemical vapor deposition
In the low doping range below 1× 10 17 cm− 3, carbon was identified as the main defect
attributing to the sudden reduction of the electron mobility, the electron mobility collapse, in n …
attributing to the sudden reduction of the electron mobility, the electron mobility collapse, in n …
[HTML][HTML] Point defect reduction in MOCVD (Al) GaN by chemical potential control and a comprehensive model of C incorporation in GaN
A theoretical framework that provides a quantitative relationship between point defect
formation energies and growth process parameters is presented. It enables systematic point …
formation energies and growth process parameters is presented. It enables systematic point …
III-nitride nanostructures for high efficiency micro-LEDs and ultraviolet optoelectronics
Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …
[HTML][HTML] High n-type conductivity and carrier concentration in Si-implanted homoepitaxial AlN
We demonstrate Si-implanted AlN with high conductivity (> 1 Ω− 1 cm− 1) and high carrier
concentration (5× 10 18 cm− 3). This was enabled by Si implantation into AlN with a low …
concentration (5× 10 18 cm− 3). This was enabled by Si implantation into AlN with a low …
[HTML][HTML] Point defect reduction in wide bandgap semiconductors by defect quasi Fermi level control
A theoretical framework for a general approach to reduce point defect density in materials
via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved …
via control of defect quasi Fermi level (dQFL) is presented. The control of dQFL is achieved …