Methods are described for forming a flowable low-k dielec tric layer on a patterned substrate.
The film may be a silicon carbon-oxygen (Si-CO) layer in which the silicon and carbon …

Methods of treating the interior of a plasma region are described. The methods include a
preventative maintenance procedure or the start-up of a new substrate processing chamber …

C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL;
CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; …

2002/0079523 A1 6/2002 Zheng et a1. 2006/0068599 A1 3/2006 Baek et a1. 2002/0081817
A1 6/2002 Bhakta et a1. 2006/0075966 A1 4/2006 Chen et a1. 2002/0086166 A1 7/2002 …

5,110.407 5,212,119 5,271,972 5,279,784 5,364,488 5,393,708 5.426, 076 5.434, 109
5,468,687 5,485,420 5,530,293 5,547,703 5,558,717 5,578,532 5,587,014 5,593,741 …

US8242031B2 - High quality silicon oxide films by remote plasma CVD from disilane precursors
- Google Patents US8242031B2 - High quality silicon oxide films by remote plasma CVD from …

(57) ABSTRACT Related US Application Data Methods, materials, and systems are
described for forming (60) Provisional application No. 61/311,061, filed on Mar. conformal …

Substrate processing systems are described that have a capacitively coupled plasma (CCP)
unit positioned inside a process chamber. The CCP unit may include a plasma excitation …

C23C I6/00(2006.01) region and a second plasma region, and delivering the Sub 52) US C
427,569. 11877 19: 118/723 MP strate to the processing chamber, where the Substrate …

A method of forming a silicon oxide layer is described. The method first deposits a silicon-
nitrogen-and-hydrogen-containing (polysilazane) film by radical-component chemical vapor …