1/f noise of short-channel indium tin oxide transistors under stress

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Electronic noise—From advanced materials to quantum technologies

AA Balandin, E Paladino, PJ Hakonen - Applied Physics Letters, 2024 - pubs.aip.org
The science of electronic fluctuations and noise has been one of the most important
branches of applied physics. The investigation of noise is essential for the understanding of …
被引用次数：9 相关文章 所有 7 个版本

Superior High-Temperature Electrical Characteristics of ALD Ultrathin In2O3 Transistors

T Gao, P Hong, K Hu, X Miao, Y He… - IEEE Electron Device …, 2024 - ieeexplore.ieee.org
In this work, we report an effective method to improve the high-temperature reliability of
atomic-layer-deposited (ALD) ultrathin (3 nm) indium oxide (In2O transistors. A high field …
被引用次数：1 相关文章 所有 2 个版本

Enhanced stability in InSnO transistors via ultrathin in-situ AlOx passivation

J Li, Y Chen, Q Gao, T Cao, J Ma, D Li, L Zheng… - Applied Surface …, 2024 - Elsevier
In this study, we present the impact of an ultrathin in-situ AlO x passivation layer on the
electrical performance and stability of InSnO (ITO) transistors. Devices incorporating an …
相关文章 所有 2 个版本

Exploring the Impact of Channel Thickness Scaling on PBTI and Low-Frequency Noise in Ultrathin IGZO Transistors

G Liu, Q Kong, X Wang, YH Tu, Z Zheng… - … on Electron Devices, 2024 - ieeexplore.ieee.org
This study presents a thorough investigation into the influence of channel thickness () on the
positive bias temperature instability (PBTI) and low-frequency noise (LFN) characteristics of …
相关文章 所有 3 个版本