Major features of silicon carbide (SiC) power devices include high blocking voltage, low on-
state loss, and fast switching, compared with those of the Si counterparts. Through recent …

Silicon carbide (SiC) power devices have been investigated extensively in the past two
decades, and there are many devices commercially available now. Owing to the intrinsic …

Owing to the superior properties of silicon carbide (SiC), such as higher breakdown voltage,
higher thermal conductivity, higher operating frequency, higher operating temperature, and …

Silicon carbide (SiC) power devices significantly outperform the well-established silicon (Si)
devices in terms of high breakdown voltage, low power loss, and fast switching. This review …

The physical and chemical properties of wide bandgap semiconductors silicon carbide and
diamond make these materials an ideal choice for device fabrication for applications in …

Despite silicon carbide's (SiC's) high breakdown electric field, high thermal conductivity and
wide bandgap, it faces certain reliability challenges when used to make conventional power …

Recent progress in the SiC material and ultrahigh-voltage devices is reviewed. Regarding
the material issues, fast epitaxial growth of high-purity epitaxial layers and reduction of basal …

Silicon carbide (SiC) pin diodes having five different n--layer (i-layer) thicknesses from 48 to
268 μm are fabricated. The forward characteristics of SiC pin diodes are significantly …

With the advancement of semiconductor technology, solid state transformer (SST) with high
voltage fast switching SiC power devices is becoming a valid option to replace the …

This letter reports the demonstration of the first 4H-SiC Schottky barrier diode (SBD) blocking
over 10 kV based on 115-μm n-type epilayers doped to 5.6× 10/sup 14/cm/sup-3/through the …