In this study, Gallium oxide (Ga 2 O 3) thin films were deposited by vacuum thermal
evaporation technique. The effects of annealing temperature on the structural, optical and …

The current study focuses on the annealing-induced changes in the structural, non-
linear/linear optical, and surface morphological characteristics of nanostructured Ag60 …

Abstract Chalcogenide system Ge 20 Se 80− x S x (x= 0, 15 and 30%) thin films were
prepared by thermal evaporation technique. The amorphous state of the samples was …

Abstract Thin films of Se 79 Te 10 Sb 4 Bi 7, were prepared by Electron beam deposition
technique. The structure of the as-prepared and annealed films has been studied by X-ray …

Chalcogenide based glasses are active materials for infrared imaging and semiconducting
devices due to their large transparency in infrared regions. Present paper focus on the …

A metastable phase of Bi2Se3 with orthorhombic structure has been obtained by
potentiostatic electrodeposition onto Si (100) substrate. The ideal stoichiometry and single …

Programmable metallization cell is one of important threshold switching selectors. We first
performed a study on the selector based on amorphous chalcogenide material (Si 0.4 Te …

Amorphous Ge10Se90− xTex (with x= 0, 5, 10 and 15at.%) thin films were prepared by
thermal evaporation method. The optical transmission spectra of these films were measured …

Abstract Se 75− x Te 25 In x (x= 0, 3, 6, & 9) bulk glasses were obtained by melt quench
technique. Thin films of thickness 400 nm were prepared by thermal evaporation technique …

Chalcogenide thin films of Se 82.5 Te 15 Sb 2.5 with different thickness (50–300 nm) are
prepared by thermal evaporation technique. Crystalline phases of the deposited films are …