Since the first report of amorphous In–Ga–Zn–O based thin film transistors, interest in oxide
semiconductors has grown. They offer high mobility, low off-current, low process …

Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality
thin film materials at the nanoscale for applications in transistors. This review …

This article is a review of recent research and development advances in oxide thin film
transistors (TFTs) fabricated by atomic layer deposition (ALD) processes. The ALD process …

Rather than generating a photocurrent through photo-excited carriers by the photoelectric
effect, the photogating effect enables us to detect sub-bandgap rays. The photogating effect …

Abstract Vertical three-dimensional (3D) integration is a highly attractive strategy to integrate
a large number of transistor devices per unit area. This approach has emerged to …

High-performance p-type oxide thin film transistors (TFTs) have great potential for many
semiconductor applications. However, these devices typically suffer from low hole mobility …

Thanks to the extraordinary advances flexible electronics have experienced over the last
decades, applications such as conformable active-matrix displays, ubiquitously integrated …

Copper (I) oxide (Cu2O), which is obtained from copper (II) oxide (CuO) through a reduction
process, is a p-type oxide material with a band gap of 2.1–2.4 eV. However, the switching …

Solution-processed n-type oxide semiconductors have received great interest in thin-film
transistor (TFT) applications. However, solution-processed p-type oxide semiconductors are …

Transparent electronics has attracted much attention and been widely studied for next-
generation high-performance flat-panel display application in the past few years, because of …