High-entropy oxides (HEO) with entropic stabilization and compositional flexibility have
great potential application in batteries and catalysis. In this work, HEO thin films were …

We report our recent observations of the growth temperature and source flux dependence of
the light emission, In incorporation and quantum confinement of core–shell InGaN …

A data-driven approach is used to describe the growth of crystals and thin films based on
high-throughput numerical experiments. This way the Machine Learning (ML) helps to …

Quantum dot (QD) growth on high ($ c_ {3v} $) symmetry GaAs {111} surfaces holds promise
for efficient entangled photon sources. Unfortunately, homoepitaxy on GaAs {111} surfaces …

This study was meticulously conducted, delving into the epitaxial growth of nanothin β-
In2Se3 films on sapphire (0001) using molecular beam epitaxy. The growth temperature …

The crystallization proceeds by the advance of the crystal faces into the disordered phase at
the expense of the material excess, the supersaturation. Using a conservation constraint for …

The effect of step–step exclusion on growing vicinal surfaces destabilized by a step-up (SU)
or step-down (SD) driving force is extensively studied in diffusion-limited (DL) and kinetics …

Manganite thin films are promising candidates for studying strongly correlated electron
systems. Understanding the growth and morphology-driven changes in the physical …

This paper presents recent advances in the theory of multicomponent crystal growth from
gas or solution, focusing on the most common step-flow mechanisms: Burton-Cabrera …

The growth of a crystal is usually determined by its surface. Many factors influence the
growth dynamics. Energy barriers associated with the presence of steps most often decide …