A strategic review on gallium oxide based power electronics: Recent progress and future prospects
Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …
switching speeds, leading to rampant research in the field of next generation wide bandgap …
Reverse Recovery and Rectification Characteristic of β-Ga2 O3 Schottky Barrier Diode
A gallium oxide (β-Ga 2 O 3) Schottky barrier diode (SBD) is proposed and characterized.
The fabricated diode has an area of 300 μm× 300 μm with a 12 μm unintentionally-doped …
The fabricated diode has an area of 300 μm× 300 μm with a 12 μm unintentionally-doped …