High-quality defect-free lonsdaleite Si and Ge can now be grown on hexagonal nanowire
substrates. These hexagonal phases of group-IV semiconductors have been predicted to …

Recent advances in the synthetic growth of nanowires have given access to crystal phases
that in bulk are only observed under extreme pressure conditions. Here, we use first …

In the past decades, group IV nanowires and nanoparticles have been the subject of
extensive research. Beside tremendous progress in morphological control and integration in …

Advances in the fabrication and characterization of nanowires polytypes have made crystal
phase engineering a well-established tool to tailor material properties. In this review, recent …

Semiconducting nanowires (NWs) offer the unprecedented opportunity to host different
crystal phases in a nanostructure, which enables the formation of polytypic heterostructures …

Silicon is indisputably the most advanced material for scalable electronics, but it is a poor
choice as a light source for photonic applications, due to its indirect band gap. The recently …

Hexagonal germanium in the lonsdaleite structure has a direct band gap, but it is not an
efficient light emitter due to the vanishing oscillator strength of electronic transitions at the …

The natural and true band profiles at heterojunctions formed by hexagonal Si x Ge 1− x
alloys are investigated by a variety of methods: density-functional theory for atomic …

Hexagonal group IV materials like silicon and germanium are expected to display
remarkable optoelectronic properties for future development of photonic technologies …

A new hexagonal phase of Si 1− x Ge x alloys have been successfully synthesized through
efforts in recent reports. Utilizing the combined first-principle calculations and special quasi …