Abstract Two-dimensional (2D) transition metal dichalcogenide (TMDC) monolayers are
promising materials for light-emitting devices due to their excellent electric and optical …

Ferroelectric oxides interfaced with transition metal dichalcogenides (TMDCs) offer a
promising route toward ferroelectric-based devices due to lack of dangling bonds on the …

2-D field-effect transistors (FETs) hold great promise for achieving further integrated
electronics and extending the life of Moore's law. However, amorphous SiO 2 (a-SiO 2) with …

Internal photoemission of electrons was used to determine the energy position of the top
valence band of mono-and few-layer WS2 on an SiO2/Si substrate. It was found, contrary to …

Using internal photoemission of electrons, the energy position of the valence band top edge
in 1 monolayer WS 2 films on top of SiO 2 thermally-grown on Si was monitored to evaluate …

Over the past 50 years Si based integrated circuits have been downscaling tremendously to
create faster logic chips and high-volume memory circuits. Such scaling required significant …

Excitonic and band-to-band transitions in monolayer WS 2 were observed using transient
photoconductivity in metal-insulator-silicon structures. Significant improvement in sensitivity …