Single-photon detections (SPDs) represent a highly sensitive light detection technique
capable of detecting individual photons at extremely low light intensity levels. This …

Identifying the behavior of photoexcited carriers is one method for empirically boosting their
transfer efficiencies in doped double quantum dots (DQDs) photocells. The photoexcited …

Application of a multiplication region in the structure of a quantum dot infrared photodetector
(QDIP) is studied. Device is based on separated absorption and multiplication layers at …

We report the design and analysis of a single photon avalanche detector (SPAD) with
cascaded multiplication stages with asymmetric gain series for near-IR applications. The …

In this paper, a novel structure for quantum ring inter-subband photodetectors (QRIP) is
proposed to reduce its dark current. Some additional layers including asymmetric multi …

In this paper we report charge trapping effect in a few number of nanocrystals silicon (2–4 nc-
Si) embedded in SiO 2 layer tunnel oxide of small area single electron photodetector (Photo …

Performance analysis of the quantum dots infrared photodetector (QDIP), which can provide
device designers with theoretical guidance and experimental verification, arouses a wide …

A single-photon detector is presented with quantum dot (QD) layers in its absorption region.
The proposed detector is a three-terminal device in which a QD-based absorption region is …

A novel design of a single-photon avalanche photodiode (SPAD) is proposed based on
resonant cavity (RC) structure, and its performance is studied. In the proposed structure …

Employment of additional multiplication region in the structure of quantum dots-in-well
(DWELL) intersubband photodetectors can be a useful alternative for amplification of the …