Recent advances in GaN‐based power HEMT devices
The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …
systems require the development of power devices that can outperform conventional Si …
A review of gan hemt dynamic on-resistance and dynamic stress effects on field distribution
Gallium nitride (GaN) is an emerging wide-bandgap material with superior physical
characteristics, including critical electric field, electron mobility, and specific on-resistance …
characteristics, including critical electric field, electron mobility, and specific on-resistance …
[PDF][PDF] Effect of Different Etching Time on Fabrication of an Optoelectronic Device Based on GaN/Psi.
Gallium nitride (GaN)/porous silicon (PSi) film was prepared using a pulsed laser deposition
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …
method and 1064 nm Nd: YAG laser for optoelectronic applications and a series of Psi …
Deep-level traps in AlGaN/GaN-and AlInN/GaN-based HEMTs with different buffer doping technologies
Deep-level traps in AlGaN/GaNand AlInN/GaN-based HEMTs with different buffer doping
technologies are identified by drain current transient spectroscopy (DCTS) and low …
technologies are identified by drain current transient spectroscopy (DCTS) and low …
Al diffusion at AlN/Si interface and its suppression through substrate nitridation
L Wei, X Yang, J Shen, D Liu, Z Cai, C Ma, X He… - Applied Physics …, 2020 - pubs.aip.org
One of the challenges for GaN-on-Si radio frequency (RF) device applications is the RF loss,
which is mainly associated with a parasitic channel formed at the interface of AlN and high …
which is mainly associated with a parasitic channel formed at the interface of AlN and high …
AlGaN/GaN on SiC devices without a GaN buffer layer: Electrical and noise characteristics
We report on the high-voltage, noise, and radio frequency (RF) performances of aluminium
gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN …
gallium nitride/gallium nitride (AlGaN/GaN) on silicon carbide (SiC) devices without any GaN …
Trap-assisted degradation mechanisms in E-mode p-GaN power HEMT: A review
P Nautiyal, P Pande, VS Kundu… - Microelectronics …, 2022 - Elsevier
Abstract Transistor-based on Gallium Nitride (GaN) technology, has enabled energy-saving
power electronics to alleviate global energy utilization. Being the initial stages of the …
power electronics to alleviate global energy utilization. Being the initial stages of the …
Identification of semi-ON-state current collapse in AlGaN/GaN HEMTs by drain current deep level transient spectroscopy
A drain-controlled current-mode deep level transient spectroscopy (I-DLTS), was developed
for investigation of Semi-ON-state current collapse in AlGaN/GaN high electron mobility …
for investigation of Semi-ON-state current collapse in AlGaN/GaN high electron mobility …
Accurate Measurement of Dynamic on-State Resistances of GaN Devices Under Reverse and Forward Conduction in High Frequency Power Converter
Because of trapped charges in GaN transistor structure, device dynamic on-state resistance
R_DSon is increased when it is operated in high frequency switched power converters, in …
R_DSon is increased when it is operated in high frequency switched power converters, in …
Compensation dopant-free GaN-on-Si HEMTs with a polarization engineered buffer for RF applications
A Gowrisankar, VS Charan… - … on Electron Devices, 2023 - ieeexplore.ieee.org
We report on the performance of compensation doping-free aluminum gallium-nitride
(AlGaN)/gallium-nitride (GaN) high-electron mobility transistors (HEMTs) realized using a …
(AlGaN)/gallium-nitride (GaN) high-electron mobility transistors (HEMTs) realized using a …