Abstract Molecular Beam Epitaxy (MBE) is a crystal growth technique used to manufacture
ultra-thin semiconducting layers with nearly flawless control over layer their compositions …

Passive imaging for mid-wave infrared (MWIR) is resistant to atmospheric pollutants,
guaranteeing image clarity and accuracy. Arrayed photodetectors can simultaneously …

Two-dimensional (2D) material heterostructures have attracted considerable attention owing
to their interesting and novel physical properties, which expand the possibilities for future …

Achieving precise control over the growth of fully covered MoTe 2 on a substrate is a crucial
requirement for advancing device fabrication in the future. However, this goal continues to …

Compared with silicon (Si), 2D-graphene is a promising candidate for broadband
photodetection. However, its flat surface and extremely low light absorption properties …

The van der Waals (vdWs) heterostructures, with vertical layer stacking structure of various
two-dimensional (2D) materials, maintain the reliable photonic characteristics while …

We report the temperature dependences of the dielectric function ε= ε 1+ i ε 2 and critical
point (CP) energies of the uniaxial crystal GaSe in the spectral energy region from 0.74 to …

Graphene is a promising candidate for the next‐generation infrared array image sensors at
room temperature due to its high mobility, tunable energy band, wide band absorption, and …

The investigation of the oxidation behavior of van der Waals chalcogenides holds significant
importance in terms of preventing and controlling oxidation, utilizing surface oxidation …

Recently, searching for a metal–semiconductor junction (MSJ) that exhibits low-contact
resistance has received tremendous consideration, as they are essential components in …