Wide bandgap devices in AC electric drives: Opportunities and challenges

AK Morya, MC Gardner, B Anvari, L Liu… - IEEE Transactions …, 2019 - ieeexplore.ieee.org
Wide bandgap (WBG) device-based power electronics converters are more efficient and
lightweight than silicon-based converters. WBG devices are an enabling technology for …

A comprehensive overview of power converter applied in high-power wind turbine: Key challenges and potential solutions

P Catalán, Y Wang, J Arza… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
The increasing penetration of offshore wind power generation promotes the revolution of
wind turbine toward high-power application. The development of high-power wind turbine …

A survey of EMI research in power electronics systems with wide-bandgap semiconductor devices

B Zhang, S Wang - IEEE Journal of Emerging and Selected …, 2019 - ieeexplore.ieee.org
Wide-bandgap (WBG) power semiconductor devices have become increasingly popular due
to their superior characteristics compared to their Si counterparts. However, their fast …

Further Evidence on The Link Between Firm'S Control Mechanisms and Firm Financial Performance: Sultanate of Oman

ER Ahmed, TTY Alabdullah… - … of Governance and …, 2020 - journal.ump.edu.my
Based on the agency theory perspective and its corporate governance problem, the current
study investigated how control mechanisms affect firm financial performance with a special …

A review of switching slew rate control for silicon carbide devices using active gate drivers

S Zhao, X Zhao, Y Wei, Y Zhao… - IEEE Journal of …, 2020 - ieeexplore.ieee.org
Driving solutions for power semiconductor devices are experiencing new challenges since
the emerging wide bandgap power devices, such as silicon carbide (SiC), with superior …

Intelligent gate drivers for future power converters

J Henn, C Lüdecke, M Laumen… - … on Power Electronics, 2021 - ieeexplore.ieee.org
This article gives insights into recent developments in the field of power semiconductor gate
drivers that exhibit intelligent features. Such features are active switching transient control …

A review of switching oscillations of wide bandgap semiconductor devices

J Chen, X Du, Q Luo, X Zhang, P Sun… - IEEE Transactions on …, 2020 - ieeexplore.ieee.org
Wide bandgap (WBG) devices offer the advantages of high frequency, high efficiency, and
high power density to power converters due to their excellent performance. However, their …

Active gate driver for improving current sharing performance of paralleled high-power SiC MOSFET modules

Y Wen, Y Yang, Y Gao - IEEE Transactions on power …, 2020 - ieeexplore.ieee.org
Featuring higher switching speed and lower losses, the silicon carbide MOSFETs (SiC
MOSFETs) are widely used in higher power density and higher efficiency power electronic …

A novel active gate driver for improving switching performance of high-power SiC MOSFET modules

Y Yang, Y Wen, Y Gao - IEEE Transactions on Power …, 2018 - ieeexplore.ieee.org
Featuring higher switching speed and lower losses, the silicon carbide mosfets (SiC
mosfets) are widely used in higher power density and higher efficiency power electronic …

Adaptive multi-level active gate drivers for SiC power devices

S Zhao, A Dearien, Y Wu, C Farnell… - … on Power Electronics, 2019 - ieeexplore.ieee.org
State-of-the-art silicon carbide (SiC) power devices provide superior performance over
silicon devices with much higher switching frequencies/speed and lower losses. High …