[图书][B] GaAs and related materials: bulk semiconducting and superlattice properties
S Adachi - 1994 - World Scientific
The Al x Ga 1− x As/GaAs heterostructure system is potentially of great importance for many
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
high-speed electronics and optoelectronic devices, because the lattice parameter difference …
Tight-binding modelling of materials
CM Goringe, DR Bowler… - Reports on Progress in …, 1997 - iopscience.iop.org
The tight-binding method of modelling materials lies between the very accurate, very
expensive, ab initio methods and the fast but limited empirical methods. When compared …
expensive, ab initio methods and the fast but limited empirical methods. When compared …
[图书][B] Semiconductors: Bonds and bands
DK Ferry - 2019 - iopscience.iop.org
This second edition discusses the importance of semiconductors along with their newest
applications. The book introduces the ever-changing field of semiconductors, before …
applications. The book introduces the ever-changing field of semiconductors, before …
Electronic and optical properties of GaInX2 (X=As, P) from first principles study
The structural, electronic and optical properties of GaInAs 2 and GaInP 2 with chalcopyrite
structure in ternaries compounds have been studied in the present paper. To obtain …
structure in ternaries compounds have been studied in the present paper. To obtain …
Dependence of the band structure on the order parameter for partially ordered alloys
An empirical pseudopotential method is demonstrated for realistically and accurately
calculating the band structure of partially CuPt ordered Ga x In 1− x P alloys. A sufficiently …
calculating the band structure of partially CuPt ordered Ga x In 1− x P alloys. A sufficiently …
Ab initio modeling of vacancies, antisites, and Si dopants in ordered InGaAs
In 0.53 Ga 0.47 As, a III–V compound semiconductor with high electron mobility, is expected
to bring better performance than silicon in next-generation n-type MOSFET devices …
to bring better performance than silicon in next-generation n-type MOSFET devices …
First-principles study of structural, electronic, linear and nonlinear optical properties of Ga2PSb ternary chalcopyrite
T Ouahrani, AH Reshak, A Otero de la Roza… - The European Physical …, 2009 - Springer
We report results from first-principles density functional calculations using the full-potential
linear augmented plane wave (FP-LAPW) method. The generalized gradient approximation …
linear augmented plane wave (FP-LAPW) method. The generalized gradient approximation …
Semiempirical tight binding modeling of Cd based II–VI heterostructures for solar cells
Realization of the full potentials of group II–VI heterostructures for photovoltaic device
applications require reliable and precise predictive band structure models that are …
applications require reliable and precise predictive band structure models that are …
Band‐to‐band recombination in Ga0.5In0.5P
U Strauss, WW Rühle, HJ Queisser, K Nakano… - Journal of applied …, 1994 - pubs.aip.org
The recombination kinetics of the electron‐hole plasma in strongly excited, undoped Ga0.
5In0. 5P are investigated at 300 and 150 K by time‐resolved photoluminescence …
5In0. 5P are investigated at 300 and 150 K by time‐resolved photoluminescence …