We have synthesized the complete stoichiometric range of p-Mg2Si1− xSnx, striving to optimize the thermoelectric properties of p-type Mg2 (Si, Sn) with respect to composition …
H Naithani, E Müller, J de Boor - Journal of Physics: Energy, 2022 - iopscience.iop.org
Thermoelectrics is a field driven by material research aimed at increasing the thermal to electrical conversion efficiency of thermoelectric (TE) materials. Material optimisation is …
Solid solutions with chemical formula Mg 2 (Si, Ge, Sn) are promising thermoelectric materials with very good properties for the n-type material but significantly worse for the p …
G Castillo-Hernandez, M Yasseri, B Klobes… - Journal of Alloys and …, 2020 - Elsevier
Abstract Knowledge of the mechanical properties of thermoelectric materials at high temperature is required for the modelling and optimization of a thermoelectric generator …
Abstract Mg (Sn, Si) and Mg (Sn, Ge) are promising n-type thermoelectric materials with good thermoelectric properties in the temperature range of 300–800 K. For power …
P Nieroda, K Mars, J Nieroda, J Leszczyński, M Król… - Ceramics …, 2019 - Elsevier
Magnesium silicide is one of the most promising, inexpensive, environment friendly and low density (1.99 g cm− 3) thermoelectric material. These attributes distinguish it from other well …
X Yu, W Jin, J Pang, J Zuo, X Kuang… - Journal of Materials …, 2024 - pubs.rsc.org
Flexible thermoelectric materials exhibit robust fracture resistance, rendering them highly promising for applications in wearable thermoelectric devices. Here, we design an …
H Kamila, A Sankhla, M Yasseri, E Mueller… - Advanced …, 2020 - Wiley Online Library
Magnesium silicide and its solid solutions are among the most attractive materials for thermoelectric generators in the temperature range of 500–800 K. However, while n‐type …
T Ogawa, A Taguchi, A Kuwabara - Npj Computational Materials, 2022 - nature.com
Concentrations of intrinsic and extrinsic point defects in crystalline materials with a bandgap are typically calculated in a constant-μ approach from defect formation energies based on …