US 2006/0255423 A1 Nov. 16, 2006 (57) ABSTRACT (51) Int. Cl. H011, 29/47(200601)
Integral structures that block the current conduction of the H01L 29/8 72(200601) built-in PiN …

Edge termination for silicon carbide devices has a plurality of concentric floating guard rings
in a silicon carbide layer that are adjacent and spaced apart from a silicon carbide based …

Edge termination for a silicon carbide Schottky rectifier is provided by including a silicon
carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adjacent a …

H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state
components formed in or on a common substrate including semiconductor components …

A RESURF layer including a plurality of P-type implantation layers having a low
concentration of P-type impurity is formed adjacent to an active region. The RESURF layer …

(57) ABSTRACT A semiconductor device includes an active region formed in an upper layer
portion of a semiconductor layer of a first conductivity type, and a plurality of electric field …

US7759186B2 - Method for fabricating junction termination extension with formation of
photosensitive dopant mask to control doping profile and lateral width for high-voltage …

Edge termination for a Silicon carbide Schottky rectifier is provided by including a Silicon
carbide epitaxial region on a voltage blocking layer of the Schottky rectifier and adja cent a …

The present disclosure relates to a power module that has a housing with an interior
chamber and a plurality of switch modules interconnected to facilitate switching power to a …

According to one embodiment, a semiconductor device pro vided with a structure, which
prevents withstand voltage dete rioration and may be manufactured at a low cost, is …