The flat panel display (FPD) market has been experiencing a rapid transition from liquid
crystal (LC) to organic light emitting diode (OLED) displays, leading, in turn, to the …

We have fabricated 6.5 in. flexible full-color top-emission active matrix organic light-emitting
diode display on a polyimide (PI) substrate driven amorphous indium gallium zinc oxide thin …

We investigated the threshold voltage (V th) instability for various gate dielectrics (⁠ SiN x
and SiO x⁠) in amorphous indium-gallium-zinc oxide (⁠ a-IGZO) thin film transistors (TFTs) …

We investigated the transfer characteristics and the gate-bias stability of amorphous indium-
gallium-zinc oxide thin-film transistors when the channel layer was exposed to hydrogen …

Solution-deposited amorphous indium gallium zinc oxide (a-IGZO) thin film transistors
(TFTs) with high performance were fabricated using O 2-plasma treatment of the films prior …

A comparative study was made of the performance and electrical instabilities in amorphous
indium-gallium-zinc oxide (a-IGZO) thin film transistors with Al 2 O 3 and Al 2 O 3/SiN x gate …

We report on the fabrication and the electrical properties of amorphous (α-) InGaZnO 4 thin-
film transistors deposited on cellulose paper by sputtering at room temperature. The 150-μ m …

We investigated the effect of the high-k TiO x (k∼ 40) gate dielectric on the mobility (μ FE) of
indium-gallium-zinc oxide (IGZO) transistors. As the thickness of the TiO x layer at the …

We have fabricated bottom-gate amorphous (α-) indium-gallium-zinc-oxide (InGaZnO 4) thin
film transistors (TFTs) on both paper and glass substrates at low processing temperature (≤ …

Solution‐processed semiconductors such as conjugated polymers have great potential in
large‐area electronics. While extremely appealing due to their low‐temperature and high …