Beyond the four-level model: dark and hot states in quantum dots degrade photonic entanglement

BU Lehner, T Seidelmann, G Undeutsch, C Schimpf… - Nano Letters, 2023 - ACS Publications
Entangled photon pairs are essential for a multitude of quantum photonic applications. To
date, the best performing solid-state quantum emitters of entangled photons are …

Atomistic simulations of laser-controlled exciton transfer and stabilization in symmetric double quantum dots

P Krause, JC Tremblay, A Bande - The Journal of Physical …, 2021 - ACS Publications
The creation, transfer, and stabilization of localized excitations are studied in a donor–
acceptor Frenkel exciton model in an atomistic treatment of reduced-size double quantum …

Droplet epitaxy symmetric InAs/InP quantum dots for quantum emission in the third telecom window: morphology, optical and electronic properties

P Holewa, S Kadkhodazadeh, M Gawełczyk… - …, 2022 - degruyter.com
The rapidly developing quantum communication technology requires deterministic quantum
emitters that can generate single photons and entangled photon pairs in the third telecom …

Exciton lifetime and emission polarization dispersion in strongly in-plane asymmetric nanostructures

M Gawełczyk, M Syperek, A Maryński, P Mrowiński… - Physical Review B, 2017 - APS
We present a theoretical and experimental investigation of exciton recombination dynamics
and the related polarization of emission in highly in-plane asymmetric nanostructures …

Optical and electronic properties of low-density InAs/InP quantum-dot-like structures designed for single-photon emitters at telecom wavelengths

P Holewa, M Gawełczyk, C Ciostek, P Wyborski… - Physical Review B, 2020 - APS
Due to their band-structure and optical properties, InAs/InP quantum dots (QDs) constitute a
promising system for single-photon generation at the third telecom window of silica fibers …

Optical and Electronic Properties of Symmetric Quantum Dots Formed by Ripening in Molecular Beam Epitaxy: A Potential System for Broad …

P Holewa, M Gawełczyk, A Maryński, P Wyborski… - Physical Review …, 2020 - APS
We present a detailed experimental optical study supported by theoretical modeling of In As
quantum dots (QDs) embedded in an (In, Al, Ga) As barrier lattice matched to In P (001) …

Effects of dislocation filtering layers on optical properties of third telecom window emitting InAs/InGaAlAs quantum dots grown on silicon substrates

W Rudno-Rudziński, M Gawełczyk… - … Applied Materials & …, 2024 - ACS Publications
Integrating light emitters based on III–V materials with silicon-based electronics is crucial for
further increase in data transfer rates in communication systems since the indirect bandgap …

Coulomb mediated hybridization of excitons in coupled quantum dots

PL Ardelt, K Gawarecki, K Müller, AM Waeber… - Physical Review Letters, 2016 - APS
We report Coulomb mediated hybridization of excitonic states in optically active InGaAs
quantum dot molecules. By probing the optical response of an individual quantum dot …

Hole spins in an InAs/GaAs quantum dot molecule subject to lateral electric fields

X Ma, GW Bryant, MF Doty - Physical Review B, 2016 - APS
There has been tremendous progress in manipulating electron and hole-spin states in
quantum dots or quantum dot molecules (QDMs) with growth-direction (vertical) electric …

Atypical dependence of excited exciton energy levels and electron-hole correlation on emission energy in pyramidal InP-based quantum dots

M Gawełczyk - Scientific Reports, 2022 - nature.com
We calculate the spectrum of excited exciton states in application-relevant self-assembled
pyramidal quantum dots grown in InAs/InP and InAs/AlGaInAs material systems. These types …