Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

So far, the semiconductor nanowire research area has mainly delivered results on growth
procedures and related material properties. As the development lately has been successful …

A gallium nitride nanowire/silicon solar cell photocathode for the photoreduction of carbon
dioxide (CO2) is demonstrated. Such a monolithically integrated nanowire/solar cell …

We have characterized the photodetection capabilities of single GaN nanowires
incorporating 20 periods of AlN/GaN: Ge axial heterostructures enveloped in an AlN shell …

We present a study of GaN single-nanowire ultraviolet photodetectors with an embedded
GaN/AlN superlattice. The heterostructure dimensions and doping profile were designed in …

We present a study of germanium as n-type dopant in wurtzite GaN films grown by plasma-
assisted molecular-beam epitaxy, reaching carrier concentrations of up to 6.7× 10 20 cm− 3 …

We present an experimental study about the influence of Si and Ge doping in GaN with
focus on the occurring strain levels and overall crystalline quality. Extremely high quality …

Controllable Ge doping in GaN is demonstrated for carrier concentrations of up to 2.4× 10 20
cm− 3. Low temperature luminescence spectra from the highly doped samples reveal band …

We report the effect of germanium as n-type dopant on the electrical and optical properties of
Al x Ga 1− x N layers grown by plasma-assisted molecular-beam epitaxy. The Al content has …

In this article, we provide an overview on the recent advances made in InN, including both
planar and nanowire structures. With the improved epitaxial growth process, the background …