Flexible, substrate-free nanowire (NW) devices are desirable to overcome the extremely
challenging task of integrating III–V or III–N semiconductor devices such as LEDs and lasers …

Multiple quantum wells (MQWs) are commonly employed in InGaAs/AlGaAs semiconductor
materials for devices such as semiconductor lasers and solar cells. However, the Indium …

The impact of growth rate on the optical and crystal quality of InGaAs/AlGaAs multi-quantum
wells (MQWs) and InGaAs single layer grown by molecular beam epitaxy (MBE) is studied …

The refinement of interface structure in InGaAs/AlGaAs multiple quantum wells (MQWs)
through molecular beam epitaxy (MBE) is crucial for enhancing their luminescence …

We report a numerical analysis of the variation of Aluminium (Al) composition in Al Gallium
Nitride (AlGaN)-based Deep-Ultraviolet Light-Emitting Diode (DUV-LED) and its effects on …

The effect of growth temperature on the crystal quality and optical properties of
InGaAs/AlGaAs multiple quantum wells (MQWs) with AlGaAs barriers was studied. The …

The optical properties of wurtzite violet InGaN/GaN coupled quantum well (QW) structures
are experimentally studied using photoluminescence (PL) and electroluminescence (EL) …

The results of a study aimed at optimizing the optical properties of InGaAs quantum well
structures by employing different barrier designs are presented. Single rectangular InGaAs …

Определен внутренний квантовый выход люминесценции GaAs/AlGaAs-и
InGaAs/AlGaAs-гетероструктур для инфракрасных светодиодов. Исследовано влияние …

We use empirical sps* d 5 tight-binding calculations to determine the effects of compressive
biaxial lattice strain, perpendicular to the [001] crystal direction, in zinc blende GaAs and …