Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
Molecular beam epitaxy
BA Joyce - Reports on Progress in Physics, 1985 - iopscience.iop.org
This article reviews the major physico-chemical aspects of molecular beam epitaxy (MBE),
especially as applied to the deposition of thin epitaxial films of III-V compound and alloy …
especially as applied to the deposition of thin epitaxial films of III-V compound and alloy …
Temperature dependence of the first-order Raman scattering by phonons in Si, Ge, and : Anharmonic effects
J Menéndez, M Cardona - Physical Review B, 1984 - APS
We have measured the temperature dependence of the first-order Raman scattering by
phonons in Si, Ge, and α− S n. The full widths at half maximum of the Raman lines …
phonons in Si, Ge, and α− S n. The full widths at half maximum of the Raman lines …
[图书][B] Surfaces and interfaces of solid materials
H Lüth - 2013 - books.google.com
Surfaces and Interfaces of Solid Materials emphasises both experimental and theoretical
aspects of surface and interface physics. Beside the techniques of preparing well-defined …
aspects of surface and interface physics. Beside the techniques of preparing well-defined …
SixSnyGe1-xy and related alloy heterostructures based on Si, Ge and Sn
J Kouvetakis, M Bauer, J Tolle - US Patent 7,598,513, 2009 - Google Patents
Z. Charafi and N. Bouarissa,“The effect of the violation of Vegard's law on the optical bowing
in SiGe alloys'. Phys. Lett. A. vol. 234, pp. 493-497 (1997). H. Kajiyama, SI. Muramatsu, T …
in SiGe alloys'. Phys. Lett. A. vol. 234, pp. 493-497 (1997). H. Kajiyama, SI. Muramatsu, T …
GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
J Kouvetakis, M Bauer, J Menendez, CW Hu… - US Patent …, 2009 - Google Patents
(57) ABSTRACT A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD
reaction chamber includes introducing into the chamber a gaseous precursor comprising …
reaction chamber includes introducing into the chamber a gaseous precursor comprising …
Method for preparing ge1-x-ysnxey (e= p, as, sb) semiconductors and related si-ge-sn-e and si-ge-e analogs
J Kouvetakis, M Bauer, J Tolle, C Cook - US Patent 7,238,596, 2007 - Google Patents
US7238596B2 - Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and
related Si-Ge-Sn-E and Si-Ge-E analogs - Google Patents US7238596B2 - Method for …
related Si-Ge-Sn-E and Si-Ge-E analogs - Google Patents US7238596B2 - Method for …
Search for long-lived neutral particles decaying into lepton jets in proton-proton collisions at TeV with the ATLAS detector
G Aad, B Abbott, J Abdallah, S Abdel Khalek… - Journal of High Energy …, 2014 - Springer
A bstract Several models of physics beyond the Standard Model predict neutral particles that
decay into final states consisting of collimated jets of light leptons and hadrons (so-called …
decay into final states consisting of collimated jets of light leptons and hadrons (so-called …
Optical critical points of thin-film alloys: A comparative study
The E 0, E 0+ Δ 0, E 1, E 1+ Δ 1, E 0′, and E 2 optical transitions have been measured in
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …
Elemental Topological Dirac Semimetal: -Sn on InSb(111)
Three-dimensional (3D) topological Dirac semimetals (TDSs) are rare but important as a
versatile platform for exploring exotic electronic properties and topological phase transitions …
versatile platform for exploring exotic electronic properties and topological phase transitions …