Modern computer microprocessor chips are marvels of engineering complexity. For the
current 45 nm technology node, there may be nearly a billion transistors on a chip barely 1 …

Phase change materials (PCMs) can exist in at least two different phases (an amorphous
and one or more crystalline phases), and they can be switched repeatedly between these …

Decrease in processing speed due to increased resistance and capacitance delay is a
major obstacle for the down-scaling of electronics,–. Minimizing the dimensions of …

The concept of chemical mechanical planarization (CMP) was invented in IBM in the early
1980s by Klaus D. Beyer in an attempt to create a highly planar surface and enable …

Carbon doped oxide dielectrics comprised of Si, C, O, and H (SiCOH) have been prepared
by plasma enhanced chemical vapor deposition (PECVD) from mixtures of …

Low‐dielectric‐constant materials such as silicon dioxide serving as interconnect insulators
in current integrated circuit face a great challenge due to their relatively high dielectric …

Over the past decade, the primary focus for improving the performance of nano-electronic
metal interconnect structures has been to reduce the impact of resistance-capacitance (RC) …

Porous pSiCOH materials with ultralow dielectric constants (ulk) have been developed with
dielectric constants reaching values below 2.0. The pSiCOH films, composed of Si, C, O, and …

In this work, experimental measurements of the electronic band gap of low-k organosilicate
dielectrics will be presented and discussed. The measurement of bandgap energies of …

Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …