Atomic defects, being the most prevalent zero-dimensional topological defects, are ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be …
The development of next-generation electronics requires scaling of channel material thickness down to the two-dimensional limit while maintaining ultralow contact resistance …
PC Shen, C Su, Y Lin, AS Chou, CC Cheng, JH Park… - Nature, 2021 - nature.com
Advanced beyond-silicon electronic technology requires both channel materials and also ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …
Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition metal dichalcogenides provide an ideal material platform, but the device performances such …
Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have emerged as highly promising for new electronic technologies. However, a key challenge in …
The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation …
As the dimensions of the semiconducting channels in field-effect transistors decrease, the contact resistance of the metal–semiconductor interface at the source and drain electrodes …
Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …
Over the past decade, the field of two-dimensional (2D) layered materials has surged, promising a new platform for studying diverse physical phenomena that are scientifically …