Abstract Two‐dimensional (2D) transition metal dichalcogenides (TMDs), a rising star in the
post‐graphene era, are fundamentally and technologically intriguing for photocatalysis …

Atomic defects, being the most prevalent zero-dimensional topological defects, are
ubiquitous in a wide range of 2D transition-metal dichalcogenides (TMDs). They could be …

The development of next-generation electronics requires scaling of channel material
thickness down to the two-dimensional limit while maintaining ultralow contact resistance …

Advanced beyond-silicon electronic technology requires both channel materials and also
ultralow-resistance contacts to be discovered,. Atomically thin two-dimensional …

Beyond-silicon technology demands ultrahigh performance field-effect transistors. Transition
metal dichalcogenides provide an ideal material platform, but the device performances such …

Abstract 2D semiconductors, particularly transition metal dichalcogenides (TMDs), have
emerged as highly promising for new electronic technologies. However, a key challenge in …

The development of silicon semiconductor technology has produced breakthroughs in
electronics—from the microprocessor in the late 1960s to early 1970s, to automation …

As the dimensions of the semiconducting channels in field-effect transistors decrease, the
contact resistance of the metal–semiconductor interface at the source and drain electrodes …

Metal contacts to two-dimensional (2D) semiconductors are often plagued by the strong
Fermi level pinning (FLP) effect which reduces the tunability of the Schottky barrier height …

Over the past decade, the field of two-dimensional (2D) layered materials has surged,
promising a new platform for studying diverse physical phenomena that are scientifically …