Synaptic devices based neuromorphic computing applications in artificial intelligence

B Sun, T Guo, G Zhou, S Ranjan, Y Jiao, L Wei… - Materials Today …, 2021 - Elsevier
Synaptic devices, including synaptic memristor and synaptic transistor, are emerging
nanoelectronic devices, which are expected to subvert traditional data storage and …

Analog Synaptic Transistor with Al-Doped HfO2 Ferroelectric Thin Film

D Kim, YR Jeon, B Ku, C Chung, TH Kim… - … Applied Materials & …, 2021 - ACS Publications
Neuromorphic computing has garnered significant attention because it can overcome the
limitations of the current von-Neumann computing system. Analog synaptic devices are …

Improved Performance of the Al2O3-Protected HfO2–TiO2 Base Layer with a Self-Assembled CH3NH3PbI3 Heterostructure for Extremely Low Operating …

T George, AV Murugan - ACS Applied Materials & Interfaces, 2022 - ACS Publications
Herein, we report intriguing observations of an extremely stable nonvolatile bipolar resistive
switching (NVBRS) memory device fabricated using HfO2–TiO2 topologically protected by …

Modulating the resistive switching stability of HfO 2-based RRAM through Gd doping engineering: DFT+ U

D Zhang, J Wang, Q Wu, Y Du - Physical Chemistry Chemical Physics, 2023 - pubs.rsc.org
Oxide-based resistive random access memory (RRAM) is standing out in both non-volatile
memory and the emerging field of neuromorphic computing, with the consequence of …

Spray pyrolysis deposited iron tungstate memristive device for artificial synapse application

AR Patil, TD Dongale, RK Kamat, KY Rajpure - Materials Today …, 2021 - Elsevier
Proliferation in research investigations on Neuromorphic computing applications is
evidenced recently, with memristor as a promising and potential candidate. For such an …

Synaptic Characteristics of Atomic Layer-Deposited Ferroelectric Lanthanum-Doped HfO2 (La:HfO2) and TaN-Based Artificial Synapses

YR Jeon, D Kim, B Ku, C Chung… - ACS Applied Materials & …, 2023 - ACS Publications
Analog synaptic devices have made significant advances based on various electronic
materials that can realize the biological synapse properties of neuromorphic computing …

Improved Al2O3 RRAM performance based on SiO2/MoS2 quantum dots hybrid structure

Y Niu, X Yu, X Dong, D Zheng, S Liu, Z Gan… - Applied Physics …, 2022 - pubs.aip.org
Resistive random access memory (RRAM) has attracted considerable attention due to its
fast access speed and high storage density. Two different reset modes (progressive reset …

Optimizing the thickness of Ta2O5 interfacial barrier layer to limit the oxidization of Ta ohmic interface and ZrO2 switching layer for multilevel data storage

M Ismail, H Abbas, C Mahata, C Choi, S Kim - Journal of Materials Science …, 2022 - Elsevier
The multilevel storage capability of nonvolatile resistive random access memory (ReRAM) is
greatly desired to accomplish high functioning memory density. In this study, Ta 2 O 5 thin …

Improved resistive and synaptic switching performances in bilayer ZrOx/HfOx devices

H Ji, Y Lee, J Heo, S Kim - Journal of Alloys and Compounds, 2023 - Elsevier
In this study, we investigated the resistive switching (RS) characteristics of ZrO x/HfO x
bilayer-based resistive random-access memory (RRAM) devices. A 1.5-nm-thick HfO x layer …

Poly 3-methylthiophene based memristor device for neuromorphic computing

SM Shanbogh, A Varade, P Anjaneyulu - Synthetic Metals, 2023 - Elsevier
Von Neumann computing-based memory has reached its limit, it is incapable of performing
two tasks simultaneously, ie data storage and computation. Artificial neuromorphic …