Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies
DM Fleetwood - IEEE Transactions on Nuclear Science, 2020 - ieeexplore.ieee.org
Subthreshold leakage currents and threshold-voltage shifts due to total-ionizing-dose (TID)
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
irradiation are reviewed briefly for highly scaled devices in emerging MOS technologies …
Border traps and bias-temperature instabilities in MOS devices
DM Fleetwood - Microelectronics Reliability, 2018 - Elsevier
An overview of the effects of border traps on device performance and reliability is presented
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
for Si, Ge, SiGe, InGaAs, SiC, GaN, and carbon-based MOS devices that are subjected to …
Total-Ionizing-Dose Effects and Low-Frequency Noise in 16-nm InGaAs FinFETs With HfO2/Al2O3 Dielectrics
Total-ionizing-dose mechanisms are investigated in 16-nm InGaAs FinFETs with an HfO 2/Al
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …
2 O 3 gate-stack. Transistors are irradiated up to 500 krad (SiO 2) and annealed at high …
Gate bias and length dependences of total ionizing dose effects in InGaAs FinFETs on bulk Si
We evaluate the total ionizing dose (TID) responses of InGaAs nMOS FinFETs with different
gate lengths irradiated with 10-keV X-rays under different gate biases. The largest …
gate lengths irradiated with 10-keV X-rays under different gate biases. The largest …
TID response of bulk Si PMOS FinFETs: bias, fin width, and orientation dependence
Z Ren, X An, G Li, G Chen, M Li, G Yu… - … on Nuclear Science, 2020 - ieeexplore.ieee.org
The total ionizing dose (TID) response of bulk Si PMOS FinFETs with two fin widths and two
types of fin orientation (standard and 45° rotated) is experimentally investigated under four …
types of fin orientation (standard and 45° rotated) is experimentally investigated under four …
Total-ionizing-dose effects on InGaAs FinFETs with modified gate-stack
We evaluate the total-ionizing-dose (TID) responses of InGaAs nMOS fin field-effect
transistors (FinFETs) with a modified gate-stack irradiated with 10-keV X-rays under different …
transistors (FinFETs) with a modified gate-stack irradiated with 10-keV X-rays under different …
The deep investigation of annealing temperature and gamma irradiation on Al2O3/Yb2O3/Al2O3/n-Si (100) MOS-like structure
In this paper, we report the fabrication of Al/Al2O3/Yb2O3/Al2O3/n-Si (100) charge trapping
memory device by RF magnetron sputtering technique. The structural and electrical …
memory device by RF magnetron sputtering technique. The structural and electrical …
Total-Ionizing-Dose Effects in InGaAs MOSFETs With High-k Gate Dielectrics and InP Substrates
The total-ionizing-dose (TID) response of indium gallium arsenide (InGaAs) MOSFETs with
Al 2 O 3 gate dielectrics and several channel lengths is evaluated under different biases. DC …
Al 2 O 3 gate dielectrics and several channel lengths is evaluated under different biases. DC …
Radiation response of zirconium silicate P-MOS capacitor
The chemical bonding of zirconium silicate films were examined by FTIR. The capacitance-
voltage (CV) measurements before and after irradiation were performed at high frequency …
voltage (CV) measurements before and after irradiation were performed at high frequency …
Experimental investigation into impacts of neutron irradiation on pMOS dosimeter behaviors
L Li, X Chen, X Liu, G Zeng, G Yang, Z Li, Y Jian - Radiation Measurements, 2023 - Elsevier
The p-channel metal–oxide–semiconductor (pMOS) transistor is a frequently used dosimeter
for ionizing radiation, such as γ-rays, since its threshold voltage changes (Δ V th) in …
for ionizing radiation, such as γ-rays, since its threshold voltage changes (Δ V th) in …