Three dimensional integrated circuit
I Michael - US Patent 9,704,835, 2017 - Google Patents
A method comprises providing a first substrate having dielectric structures and conductive
structures. Ions are implanted into the first substrate, the ions traveling through the dielectric …
structures. Ions are implanted into the first substrate, the ions traveling through the dielectric …
Three dimensional integrated circuit
I Michael - US Patent 10,049,915, 2018 - Google Patents
(57) ABSTRACT A stacked semiconductor device is formed by implanting ions through
dielectric and conductive structures of a first substrate to define a cleave plane in the first …
dielectric and conductive structures of a first substrate to define a cleave plane in the first …