For high electron mobility transistors (HEMTs) power transistors based on AlGaN/GaN
heterojunction, p-GaN gate has been the gate topology commonly used to deplete the two …

This study compared the sensing characteristics of ZnO (ZO) treated with ammonia (NH3)
plasma for 1 min, 3 min, and 6 min, under the EIS structure. The measurement results …

UV-assisted capacitance–voltage (C–V) and current–voltage (I–V) measurements were
performed on∼ 20 nm HfO 2/GaN metal–insulator–semiconductor capacitors. The effects of …

Abstract While Gallium Oxide (Ga 2 O 3) metal-oxide-semiconductor field-effect transistors
(MOSFETs) hold great potential for high power applications, effective control of the MOS …

Herein, ex situ wet cleaning and in situ high‐temperature annealing of GaN surfaces prior to
low pressure chemical vapor deposition (LPCVD) of the SiO2 gate oxide, aiming at effective …

ABSTRACT UV-assisted capacitance–voltage (C–V) and current–voltage (I–V)
measurements were performed on $20 nm HfO2/GaN metal–insulator–semiconductor …

Controlling the plasma etching step involved in metal-oxide-semiconductor high-electron-
mobility-transistor (MOSHEMT) GaN fabrication is essential for device performance and …

Based on a self-terminating gate recess etching technique, we successfully fabricated a high-
breakdown-voltage and high-threshold-voltage normally-off SiN/AlN/GaN-on-Si metal …

N-polar GaN-based HEMTs have shown tremendous promises for high-power high-
frequency (30-110 GHz) applications due to several advantages such as better pinch-off …

We have deposited a series of ALD oxides HfO 2, ZrO 2, Ta 2 O 5, Y 2 O 3, SiO 2, Al 2 O 3
within same reactor and prepared as GaN-MOS structure. A comprehensible diverse …