Investigation of nanosheet-FET based logic gates at sub-7 nm technology node for digital IC applications
The successful fabrication of Nanosheet (NS) FET by Samsung/IBM for below 7 nm
technology nodes has geared up the semiconductor industry towards future electronics. In …
technology nodes has geared up the semiconductor industry towards future electronics. In …
Circuit level analysis of a dual material graded channel (DMGC) cylindrical gate all around (CGAA) FET at nanoscale regime
PK Mudidhe, BR Nistala - ECS Journal of Solid State Science and …, 2023 - iopscience.iop.org
Gate-all around (GAA) device is one of the cutting-edge technologies in the present
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
semiconductor era owing to enhanced gate controllability and scalability at the nanoscale …
Multi-channel step FinFET with spacer engineering
Multi-channel FinFET (-FinFET) is an emerging device having promising use due to its
excellent driving capability. In this paper, we have investigated the significance of multiple …
excellent driving capability. In this paper, we have investigated the significance of multiple …
Gate-stack optimization of a vertically stacked nanosheet FET for digital/analog/RF applications
Nanosheet field effect transistors (NS-FET) are a most promising candidate for next-
generation semiconductor devices for sub-7-nm technology nodes. This work explores a two …
generation semiconductor devices for sub-7-nm technology nodes. This work explores a two …
Temperature sensitivity analysis of inner-gate engineered JL-SiNT-FET: An Analog/RF prospective
This paper explores the temperature sensitivity of Inner-gate engineered junctionless silicon
nanotube FET (JL-SiNT-FET) on analog/RF performance. It is found that the reduction in the …
nanotube FET (JL-SiNT-FET) on analog/RF performance. It is found that the reduction in the …
A simulation study of gate-all-around nanowire transistor with a core-substrate
K Han, Y Zhang, Z Deng - IEEE Access, 2020 - ieeexplore.ieee.org
In this letter, a novel Core-Substrate Gate-All-Around (CSGAA) nanowire structure has been
proposed, investigated and simulated systematically based on 3D numerical simulation …
proposed, investigated and simulated systematically based on 3D numerical simulation …
Design and analysis of AlGaN/GaN based DG MOSHEMT for high-frequency application
Abstract In this work, AlGaN/GaN based DG MOSHEMT is designed at 0.8 µm gate length
with Al 2 O 3 gate dielectric. The key device performance parameter such as gm, AV, f T, and …
with Al 2 O 3 gate dielectric. The key device performance parameter such as gm, AV, f T, and …
Simulation of a Vertical Ballistic Quantum-Barrier Field-Effect Transistor Based on an Undoped AlxGa1–xAs Quantum Nanowire
DV Pozdnyakov, AV Borzdov, VM Borzdov - Russian Microelectronics, 2023 - Springer
A design and topological solution for a tunnel field-effect transistor of a new type is proposed
and the simulation of the transistor is performed. The device is a vertical ballistic field-effect …
and the simulation of the transistor is performed. The device is a vertical ballistic field-effect …
Channel thickness dependency of high-k gate dielectric based double-gate CMOS inverter
S Tayal, P Samrat, V Keerthi… - … Journal of Nano …, 2020 - search.proquest.com
This work investigates the channel thickness dependency of high-k gate dielectric-based
complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a …
complementary metal-oxide-semiconductor (CMOS) inverter circuit built using a …
TCAD performance analysis of a symmetrical double gate non-aligned junction FET device with high and low dielectric gate oxide in sub-100 nm regime
This paper presents 2D-Sentaurus TCAD tool results of a Non-aligned Double Gate Junction
N-Channel Field Effect Transistor (NADGNFET) device; the response analysis of device to …
N-Channel Field Effect Transistor (NADGNFET) device; the response analysis of device to …