Rowhammer: A retrospective

O Mutlu, JS Kim - … Transactions on Computer-Aided Design of …, 2019 - ieeexplore.ieee.org
This retrospective paper describes the RowHammer problem in dynamic random access
memory (DRAM), which was initially introduced by Kim et al. at the ISCA 2014 Conference …

Error characterization, mitigation, and recovery in flash-memory-based solid-state drives

Y Cai, S Ghose, EF Haratsch, Y Luo… - Proceedings of the …, 2017 - ieeexplore.ieee.org
NAND flash memory is ubiquitous in everyday life today because its capacity has
continuously increased and cost has continuously decreased over decades. This positive …

Uncovering in-dram rowhammer protection mechanisms: A new methodology, custom rowhammer patterns, and implications

H Hassan, YC Tugrul, JS Kim, V Van der Veen… - MICRO-54: 54th Annual …, 2021 - dl.acm.org
The RowHammer vulnerability in DRAM is a critical threat to system security. To protect
against RowHammer, vendors commit to security-through-obscurity: modern DRAM chips …

Predictive reliability and fault management in exascale systems: State of the art and perspectives

R Canal, C Hernandez, R Tornero, A Cilardo… - ACM Computing …, 2020 - dl.acm.org
Performance and power constraints come together with Complementary Metal Oxide
Semiconductor technology scaling in future Exascale systems. Technology scaling makes …

Exploiting correcting codes: On the effectiveness of ecc memory against rowhammer attacks

L Cojocar, K Razavi, C Giuffrida… - 2019 IEEE Symposium …, 2019 - ieeexplore.ieee.org
Given the increasing impact of Rowhammer, and the dearth of adequate other hardware
defenses, many in the security community have pinned their hopes on error-correcting code …

Nova-fortis: A fault-tolerant non-volatile main memory file system

J Xu, L Zhang, A Memaripour… - Proceedings of the 26th …, 2017 - dl.acm.org
Emerging fast, persistent memories will enable systems that combine conventional DRAM
with large amounts of non-volatile main memory (NVMM) and provide huge increases in …

Understanding reduced-voltage operation in modern DRAM devices: Experimental characterization, analysis, and mechanisms

KK Chang, AG Yağlıkçı, S Ghose, A Agrawal… - Proceedings of the …, 2017 - dl.acm.org
The energy consumption of DRAM is a critical concern in modern computing systems.
Improvements in manufacturing process technology have allowed DRAM vendors to lower …

Understanding latency variation in modern DRAM chips: Experimental characterization, analysis, and optimization

KK Chang, A Kashyap, H Hassan, S Ghose… - Proceedings of the …, 2016 - dl.acm.org
Long DRAM latency is a critical performance bottleneck in current systems. DRAM access
latency is defined by three fundamental operations that take place within the DRAM cell …

The RowHammer problem and other issues we may face as memory becomes denser

O Mutlu - Design, Automation & Test in Europe Conference & …, 2017 - ieeexplore.ieee.org
As memory scales down to smaller technology nodes, new failure mechanisms emerge that
threaten its correct operation. If such failure mechanisms are not anticipated and corrected …

{SpanDB}: A fast,{Cost-Effective}{LSM-tree} based {KV} store on hybrid storage

H Chen, C Ruan, C Li, X Ma, Y Xu - 19th USENIX Conference on File …, 2021 - usenix.org
Key-Value (KV) stores support many crucial applications and services. They perform fast in-
memory processing, but are still often limited by I/O performance. The recent emergence of …