[PDF][PDF] Investigation of improved performance of ZnO/CIGS-based solar cells
MJ Islam, MHD Chowdhury… - Journal of Advance …, 2024 - researchgate.net
The work presented herein shows that the performance of a CIGS-based solar cell can be
improved if the toxic Cadmium Sulfide (CdS) layer is replaced with a non-toxic, environment …
improved if the toxic Cadmium Sulfide (CdS) layer is replaced with a non-toxic, environment …
[PDF][PDF] Analytical Model of Cutoff Frequency of GaAs PIN Photodiode
MJ Islam, MRH Chowdhury, MH Daiyan… - Journal of VLSI …, 2024 - researchgate.net
This work has developed an analytical model of the cutoff frequency for a GaAs pin
photodiode, which can be employed to investigate the high-frequency response–a key …
photodiode, which can be employed to investigate the high-frequency response–a key …
Dependency of Heterojunction Transistors' speed on various physical parameters: A comparative study of SiGe & AlGaAs HBTs
It is very essential to find out how the speed of a Heterojunction Bipolar Transistor (HBT)
depends on different physical parameters of the transistor as the device has become …
depends on different physical parameters of the transistor as the device has become …
[PDF][PDF] Simulation-Driven Fabrication and Performance Evaluation of n-MOSFET using Silvaco Athena and Atlas: From Process to Parameters
In this work, an n-channel MOSFET of Silvaco TCAD has been fabricated and analyzed
using commercially available simulation software tools, namely Athena and Atlas. The …
using commercially available simulation software tools, namely Athena and Atlas. The …
[PDF][PDF] Base Transit Time Modeling of Gaussian-Doped SiGe HBT Considering Field-Dependence of Mobility
This work assesses the effects of fielddependence of the carrier mobility on the base transit
time of an npn SiGe hetero-junction bipolar transistor (HBT) with its base heavily doped with …
time of an npn SiGe hetero-junction bipolar transistor (HBT) with its base heavily doped with …
Effects of the field-dependence of the carrier mobility on the base transit time of SiGe HBTs having non-uniformly doped base
MM Haque, MIB Chowdhury - 2015 International Conference …, 2015 - ieeexplore.ieee.org
This work develops an analytical model of the base transit time for the SiGe-heterojunction
bipolar transistors (HBT) having non-uniformly and heavily doped base considering the field …
bipolar transistors (HBT) having non-uniformly and heavily doped base considering the field …
Estimating the transit time of an AlyGa1−yAs HBT in the Gaussian doped base region for low to moderately high level of injection
For a Gaussian doped graded base AlGaAs Hetero-junction Bipolar Transistor (HBT), base
transit time (BTT) has been determined using a suitable analytical model. Here the authors …
transit time (BTT) has been determined using a suitable analytical model. Here the authors …