We present an overview on approaches currently employed to fabricate advanced quantum
dot configurations by epitaxial growth. Widely investigated self-assembled quantum dots, ie …

Nanoscale science and technology is a young and burgeoning field that encompasses
nearly every discipline of science and engineering. With rapid advances in areas such as …

Self-assembled strained semiconductor nanostructures have been grown on GaAs
substrates to fabricate quantum dot infrared photodetectors. State-filling photoluminescence …

Carrier relaxation is a key issue in determining the efficiency of semiconductor
optoelectronic device operation. Devices incorporating semiconductor quantum dots have …

We measure the dephasing time of the exciton ground-state transition in In 1− x Ga x As
quantum dots using a sensitive four-wave mixing technique. We find experimental evidence …

The distribution of the fine-structure splitting ħ δ 1 and of the biexciton binding energy ħ δ B
are measured in a series of annealed InAs quantum dots. We find a decrease of ħ δ 1 from …

The demonstration of degeneracy of exciton spin states is an important step toward the
production of entangled photon pairs from the biexciton cascade. We measure the fine …

From observations of self-assembly of Ge quantum dots directed by substrate morphology,
we propose the concept of control of ordering in heteroepitaxy by a local strain-mediated …

III-V lasers based on self-assembled quantum dots (QDs) have attracted widespread interest
due to their unique characteristics, including low threshold current density (J th), low …

We report systematic measurements of the dephasing of the excitonic ground-state transition
in a series of InGaAs∕ GaAs quantum dots having different quantum confinement …