The aim of this review paper is to describe in a comprehensive manner the current
understanding of the radiation response of state-of-the-art Silicon-on-Insulator (SOI) and …

The radiation environment in space has severe adverse effects on electronic systems. To
evaluate radiation sensitivity, electronics are tested on earth with different types of irradiation …

Advances in microelectronics performance and density continue to be fueled by the engine
of Moore's law. Although lately this engine appears to be running out of steam, recent …

In this paper, we describe a Monte Carlo approach for estimating the frequency and
character of single event effects based on a combination of physical modeling of discrete …

This document describes the radiation environments, physical mechanisms, and test
philosophies that underpin radiation hardness assurance test methodologies. The natural …

Depending on the application, electronic systems and devices can be subjected to different
radiation environments. According to the type of radiation encountered during operation …

This paper investigates the impact of terrestrial radiation on soft error (SE) sensitivity along
the very large-scale integration (VLSI) roadmap of bulk, FDSOI and finFET nano-scale …

Low-and high-energy proton experimental data and error rate predictions are presented for
many bulk Si and SOI circuits from the 20-90 nm technology nodes to quantify how much low …

The effects of heavy ion energy and nuclear interactions on the single-event upset (SEU)
and single-event latchup (SEL) response of commercial and radiation-hardened CMOS ICs …

The relative contribution of the radial ionization profile on SEE prediction is investigated
using MUSCA-SEP 3, in comparison with the classical approach considering the ion track as …