Band parameters for III–V compound semiconductors and their alloys
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
[HTML][HTML] Intervalley scattering in terahertz quantum cascade lasers with GaSb and InGaSb wells
H Yasuda - AIP advances, 2018 - pubs.aip.org
We theoretically study the performance of terahertz quantum cascade lasers (THz-QCLs)
with GaSb wells and In x Ga 1− x Sb wells. The results of rate-equation calculations reveal …
with GaSb wells and In x Ga 1− x Sb wells. The results of rate-equation calculations reveal …
[PDF][PDF] GALLIUM INDIUM ARSENIDE (Ga^ In^ As)
YA Goldberg, NM Shmidt - S emiconductor P arameters - e-library.namdu.uz
GALLIUM INDIUM ARSENIDE (Ga^ In^ As) Page 75 CHAPTER 3 GALLIUM INDIUM ARSENIDE
(Ga^ In^ As) Yu. A. Goldberg and Natalya M. Shmidt Ioffe Institute, St. Petersburg, Russia 3.1 …
(Ga^ In^ As) Yu. A. Goldberg and Natalya M. Shmidt Ioffe Institute, St. Petersburg, Russia 3.1 …
DX centers in other III-V alloys
P Gibart - Defect and Diffusion Forum, 1994 - Trans Tech Publ
As indicated previously, the work of Lang and Logan in 1977 [1] on DX centers triggered
worldwide an impressive effort on the behavior of substitutional donors in AlxGaj. xAs. It is …
worldwide an impressive effort on the behavior of substitutional donors in AlxGaj. xAs. It is …
[PDF][PDF] Applied Physics Review
I Vurgaftman, JR Meyer, LR Ram-Mohan - J. Appl. Phys, 2001 - lib.ysu.am
At present, III–V compound semiconductors provide the materials basis for a number of well-
established commercial technologies, as well as new cutting-edge classes of electronic and …
established commercial technologies, as well as new cutting-edge classes of electronic and …
The material system (AlGaIn)(AsSb). Properties and suitability for GaSb based vertical-resonator laser diodes
O Dier - inis.iaea.org
[en] The present thesis studies the particular properties of GaSb-based materials, where
they differ from pure arsenides or phosphides, and also the impact of theses properties on …
they differ from pure arsenides or phosphides, and also the impact of theses properties on …
The material system (AlGaIn)(AsSb). Properties and suitability for GaSb based vertical-resonator laser diodes; Das Materialsystem (AlGaIn)(AsSb). Eigenschaften und …
O Dier - 2008 - osti.gov
The present thesis studies the particular properties of GaSb-based materials, where they
differ from pure arsenides or phosphides, and also the impact of theses properties on long …
differ from pure arsenides or phosphides, and also the impact of theses properties on long …
GALLIUM INDIUM ANTIMONIDE (GaIn₁-Sb)
YA Goldberg - Handbook Series on Semiconductor Parameters, 1997 - books.google.com
Thermal and mechanical properties Bulk modulus (dyn/cm²) 4.66. 1011 5.62-1011(4.66+
0.96 x)· 1011 Melting point (C) 527 712 See Fig. 4.5. 6 Specific heat (J/gC) 0.2 0.25 Thermal …
0.96 x)· 1011 Melting point (C) 527 712 See Fig. 4.5. 6 Specific heat (J/gC) 0.2 0.25 Thermal …
High Pressure Transport Experiments in 3 Dimensional Systems
For more than twenty years hydrostatic pressure has been used as a variable in
experimental measurements in semiconductors. The investigation of its effect on the …
experimental measurements in semiconductors. The investigation of its effect on the …
Short-range resonant electron scattering in Se- and S-doped GaxIn1-x Sb under hydrostatic pressure
Electron scattering mechanisms have been investigated in Se-and S-doped GaxIn1-xSb
alloys by measuring the Hall mobilities as a function of hydrostatic pressures up to 25 kbar at …
alloys by measuring the Hall mobilities as a function of hydrostatic pressures up to 25 kbar at …