Design and realization of high-power ripple-free superluminescent diodes at 1300 nm
L Fu, H Schweizer, Y Zhang, L Li… - IEEE journal of …, 2004 - ieeexplore.ieee.org
To realize high-power superluminescent diodes (SLDs) emitting at the 1300-nm wavelength
and to see how different structure parameters influence the device performances, three …
and to see how different structure parameters influence the device performances, three …
Comparison between a graded and step-index optical cavity in InGaN MQW laser diodes
In this paper we theoretically analysed the influence of the number of QWs in the active
region and the cladding layer width on the confinement factor, near field patterns and far …
region and the cladding layer width on the confinement factor, near field patterns and far …
Effect of pseudomorphic multiple quantum well layers on characteristics of uncooled electroluminescent diode
JH Han, Z Lhee, SW Park - International Journal of Modern Physics …, 2009 - World Scientific
We have fabricated and characterized the uncooled light emitting device having a
pseudomorphic structure of multiple quantum wells. The effect of numbers of compressively …
pseudomorphic structure of multiple quantum wells. The effect of numbers of compressively …
[引用][C] AlGaInAs for Quantum Well semiconductor lasers
M Zyskowski - 2023 - Teoría do sinal e comunicacións
[引用][C] Cavidades ópticas con perfil recto y parabólico del índice de refracción en láseres de AlGaAs e InGaN
JAM Alfonso, MS Colina, FG Reina - 2007 - Editorial Universitaria