Spintronic terahertz emitters: Status and prospects from a materials perspective

C Bull, SM Hewett, R Ji, CH Lin, T Thomson… - Apl Materials, 2021 - pubs.aip.org
Spintronic terahertz (THz) emitters, consisting of ferromagnetic (FM)/non-magnetic (NM) thin
films, have demonstrated remarkable potential for use in THz time-domain spectroscopy and …

Terahertz photoconductive antenna based on a topological insulator nanofilm

KA Kuznetsov, DA Safronenkov, PI Kuznetsov… - Applied Sciences, 2021 - mdpi.com
In this study, the efficient generation of terahertz radiation by a dipole photoconductive
antenna, based on a thin island film of a topological insulator, was experimentally …

Low-Temperature Growth of InGaAs Quantum Wells Using Migration-Enhanced Epitaxy

L Liu, R Chen, C Kong, Z Deng, G Liu, J Yan, L Qin… - Materials, 2024 - mdpi.com
The growth of InGaAs quantum wells (QWs) epitaxially on InP substrates is of great interest
due to their wide application in optoelectronic devices. However, conventional molecular …

[HTML][HTML] Reflective high-efficient and compact optical antenna on GaAs/AlGaAs platform

Z Wang, Y Sun, J Liao, Y Xie - Optics Communications, 2022 - Elsevier
We propose a reflective optical antenna based on a GaAs/AlGaAs platform. Its feasibility has
been verified by computational simulations. It has a simple and compact structure that …

Mechanisms of THz Radiation in Laser-Plasma Interactions

AA Choobini, SS Ghaffari-Oskooei… - arXiv preprint arXiv …, 2024 - arxiv.org
The exploration of Terahertz (THz) waves has captivated researchers across diverse
scientific disciplines such as physics, spectroscopy, chemistry, biology, and engineering …

Terahertz technologies and its applications

V Pacheco-Peña - Electronics, 2021 - mdpi.com
The terahertz frequency range (0.1–10) THz has demonstrated the provision of many
opportunities in various fields, such as high-speed communications, biomedicine, sensing …

Si‐Doping of Low‐Temperature‐Grown GaAs Heterostructures on (100) and (111) A GaAs Substrates

AN Klochkov, GB Galiev, EA Klimov… - … status solidi (b), 2023 - Wiley Online Library
Utilizing the amphoteric property of silicon impurity in GaAs (111) A for acceptor doping of
low‐temperature‐grown (LTG‐) GaAs films and LTG‐GaAs‐based heterostructures for THz …

Hyperbolic-tangent composition-graded InxGa1-xAs/GaAs (100) structures grown by molecular beam epitaxy

A Belio-Manzano, LI Espinosa-Vega… - Materials Science in …, 2022 - Elsevier
The molecular beam epitaxial growth and physical properties of In graded-composition
layers of InGaAs on GaAs (100) substrates varying nominal In concentration from 12 to 97 …

[HTML][HTML] InGaAs/InAlAs 光电导太赫兹发射天线的制备与表征

陈益航, 杨延召, 张桂铭, 徐建星, 苏向斌… - Journal of terahertz …, 2023 - opticsjournal.net
摘要光电导天线作为太赫兹时域光谱仪产生与探测太赫兹辐射的关键部件,
具有重要的科研与工业价值. 本文采用分子束外延(MBE) 方法制备InGaAs/InAlAs 超晶格作为1 …

Generation of THz Radiation by (100),(110), and (111) A-Oriented Multiple Pseudomorphic InGaAs/GaAs Quantum Wells and Photoconductive Antennas

EA Klimov, AN Klochkov, PM Solyankin… - Bulletin of the Lebedev …, 2024 - Springer
We report the effect of the built-in electric field emerging in elastically strained multiple
InGaAs/GaAs quantum wells on the THz generation efficiency upon irradiation of the surface …