Low-power electronic technologies for harsh radiation environments
Electronic technologies that can operate in harsh radiation environments are important in
space, nuclear and avionic applications. However, radiation-hardened (rad-hard) integrated …
space, nuclear and avionic applications. However, radiation-hardened (rad-hard) integrated …
Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses
G Borghello, E Lerario, F Faccio, HD Koch… - Microelectronics …, 2021 - Elsevier
We studied the radiation response of 3 different 65 CMOS planar technologies at the ultra-
high doses expected to be reached in the HL-LHC, the upgraded large hadron collider of …
high doses expected to be reached in the HL-LHC, the upgraded large hadron collider of …
Ionizing radiation effects in nanoscale CMOS technologies exposed to ultra-high doses
G Borghello - 2019 - air.uniud.it
This thesis studies the effects of radiation in nanoscale CMOS technologies exposed to ultra-
high total ionizing doses (TID), up to 1 Grad (SiO2). These extreme radiation levels are …
high total ionizing doses (TID), up to 1 Grad (SiO2). These extreme radiation levels are …
Modeling of high total ionizing dose (TID) effects for enclosed layout transistors in 65 nm bulk CMOS
High doses of ionizing radiation drastically impair the electrical performance of CMOS
technology. Enclosed gate layout remains an effective means to reduce this impact …
technology. Enclosed gate layout remains an effective means to reduce this impact …
Investigation of scaling and temperature effects in total ionizing dose (TID) experiments in 65 nm CMOS
Ten-fold radiation levels are expected in the upgrade of the High-Luminosity Large Hadron
Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages …
Collider (HL-LHC) at CERN. Bulk silicon CMOS at 65 nm offers appreciable advantages …
ICT device impacts and development trends on cosmic radiation environment
Cosmic radiation environments having extremely high-energy particles and photons cause
severe malfunctions of electrical components in space and terrestrial regions. In this study …
severe malfunctions of electrical components in space and terrestrial regions. In this study …
Design and Characterization of a Picosecond Timing ASIC in 55-nm CMOS
B Lu, J Huo, X Jiang, H Li, X Yan… - IEEE Transactions on …, 2023 - ieeexplore.ieee.org
For more than two decades, amplifier–discriminator application-specific integrated circuits
(ASICs) have been demonstrated to be the optimal choice for time measurement in high …
(ASICs) have been demonstrated to be the optimal choice for time measurement in high …
Low-Power, Subthreshold Reference Circuits for the Space Environment: Evaluated with γ-rays, X-rays, Protons and Heavy Ions
CM Andreou, DM González-Castaño, S Gerardin… - Electronics, 2019 - mdpi.com
The radiation tolerance of subthreshold reference circuits for space microelectronics is
presented. The assessment is supported by measured results of total ionization dose and …
presented. The assessment is supported by measured results of total ionization dose and …
Investigation of Deuterium De-Passivation by Repetitive Thermal Stress in CMOS Fabrication
JW Yeon, SS Yoon, HJ Park, TH Kil… - … on Device and …, 2024 - ieeexplore.ieee.org
High-pressure deuterium annealing (HPDA) has been proposed as a promising process to
enhance device performance and reliability. However, additional thermal stress after the …
enhance device performance and reliability. However, additional thermal stress after the …
Design and Validation of a V-Gate n-MOSFET-Based RH CMOS Logic Circuit with Tolerance to the TID Effect
D Ki, M Lee, N Lee, S Cho - Electronics, 2023 - mdpi.com
This study designed a radiation-hardened (RH) complementary metal oxide semiconductor
(CMOS) logic circuit based on an RH variable-gate (V-gate) n-MOSFET that was resistant to …
(CMOS) logic circuit based on an RH variable-gate (V-gate) n-MOSFET that was resistant to …