Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

New developments in theoretical studies of defects and impurities in III-Nitrides as pertinent
to compensation and recombination in these materials are discussed. New results on …

Dislocation motion, an important mechanism underlying crystal plasticity, is critical for the
hardening, processing and application of a wide range of structural and functional materials …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Wide bandgap perovskite oxides with high room temperature conductivities and structural
compatibility with a diverse family of organic/inorganic perovskite materials are of significant …

An overview is presented of displacement damage (DD) effects, total-ionizing-dose (TID)
effects, and single-event effects in AlGaN/GaN high electron mobility transistors (HEMTs) …

Solid‐state lighting is a rapidly evolving, emerging technology whose efficiency of
conversion of electricity to visible white light is likely to approach 50% within the next several …

A theory of charged-dislocation-line scattering is developed within the framework of the
Boltzmann transport equation. A fit of the theory to temperature-dependent Hall-effect data in …

Transmission electron microscopy TEM and scanning electron microscope
cathodoluminescence CL have been used to determine the influence of edge and screw …

Driven by an ever‐expanding interest in new material systems with new functionality, the
growth of atomic‐scale electronic materials by molecular beam epitaxy (MBE) has evolved …