Abstract Red-emitting In x Ga 1− x N/In y Ga 1− y N quantum wells (x> 0.2, y∼ 0.17) are
grown on ScAlMgO 4 (0001) substrates with lattice-matched In y Ga 1− y N templates. The …

We report the characterization of a N-polar InGaN layer deposited by metalorganic vapor-
phase epitaxy on a ScAlMgO 4 (0001)(SAM) substrate without a low-temperature buffer …

Single crystal growth of ScAlMgO 4 boules with 10 mm up to 4 in.(ca 101.6 mm) in diameter
by Czochralski technique was demonstrated. Some high quality ScAlMgO 4 single crystal …

GaN layers are grown on 2 inch ScAlMgO 4 (0001) nominally on-axis substrates by
metalorganic vapor phase epitaxy. The epilayer structural qualities are comparable to those …

ScAlMgO 4 (SAM) has attracted attention as a substrate for nitride semiconductor crystal
growth owing to its small a-axis lattice mismatch with GaN and InGaN. In this study, we …

ScAlMgO4 (SAM) substrates have attracted considerable attention as platforms for GaN
growth in recent years because GaN can be grown directly on SAM without any buffer layer …

ScAlMgO 4 (SCAM) substrates with a small lattice-mismatch to GaN and c-plane cleavability
are promising for fabricating high-quality free-standing GaN wafers. To reduce the cost in the …

SCAM has been expected to be a suitable substrate for GaN blue-light-emitting-diodes
(LEDs) and high-power high electron mobility transistors (HEMTs) because of its lower …

X-ray diffraction analysis through high-resolution X-ray rocking curve measurement and X-
ray topography was performed on Czockralski (CZ)-grown ScAlMgO 4 (SAM) substrates. An …

GaN layers are grown on Al-pretreated ScAlMgO4 (0001) substrates by metal-organic vapor-
phase epitaxy (MOVPE) without using low-temperature (LT) buffer layers. The Al …