Nanowires for UV–vis–IR optoelectronic synaptic devices
X Chen, B Chen, B Jiang, T Gao… - Advanced Functional …, 2023 - Wiley Online Library
Simulating biological synaptic functionalities through artificial synaptic devices opens up an
innovative way to overcome the von Neumann bottleneck at the device level. Artificial …
innovative way to overcome the von Neumann bottleneck at the device level. Artificial …
The fundamental surface science of wurtzite gallium nitride
VM Bermudez - Surface Science Reports, 2017 - Elsevier
A review is presented that covers the experimental and theoretical literature relating to the
preparation, electronic structure and chemical and physical properties of the surfaces of the …
preparation, electronic structure and chemical and physical properties of the surfaces of the …
GaN/AlN short-period superlattices for intersubband optoelectronics: A systematic study of their epitaxial growth, design, and performance
PK Kandaswamy, F Guillot, E Bellet-Amalric… - Journal of Applied …, 2008 - pubs.aip.org
We have studied the effect of growth and design parameters on the performance of Si-doped
GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near …
GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near …
InterMat: accelerating band offset prediction in semiconductor interfaces with DFT and deep learning
K Choudhary, KF Garrity - Digital Discovery, 2024 - pubs.rsc.org
We introduce a computational framework (InterMat) to predict band offsets of semiconductor
interfaces using density functional theory (DFT) and graph neural networks (GNN). As a first …
interfaces using density functional theory (DFT) and graph neural networks (GNN). As a first …
Band gap tuning in GaN through equibiaxial in-plane strains
Structural transformations and the relative variation in the band gap energy (Δ E g) of (0001)
gallium nitride (GaN) films as a function of equibiaxial in-plane strains are studied by density …
gallium nitride (GaN) films as a function of equibiaxial in-plane strains are studied by density …
Review of research on AlGaN MOCVD growth
L Tang, B Tang, H Zhang, Y Yuan - ECS Journal of Solid State …, 2020 - iopscience.iop.org
Due to the broad application prospects of optoelectronic devices and microwave devices at
high temperature and power, the process of Metal Organic Chemical Vapor Deposition …
high temperature and power, the process of Metal Organic Chemical Vapor Deposition …
Tuning the phase transition temperature, electrical and optical properties of VO 2 by oxygen nonstoichiometry: insights from first-principles calculations
Vanadium dioxide (VO2) is one of the most promising thermochromic materials with a
reversible metal–insulator transition (MIT) from a high-temperature rutile phase to a low …
reversible metal–insulator transition (MIT) from a high-temperature rutile phase to a low …
Understanding and controlling indium incorporation and surface segregation on InGaN surfaces: An ab initio approach
The incorporation of In into the technologically relevant (0001)(Ga-polar) and (000 1¯)(N-
polar) surfaces of In 0.25 Ga 0.75 N is investigated using density functional theory. The …
polar) surfaces of In 0.25 Ga 0.75 N is investigated using density functional theory. The …
Structural and electronic properties of cubic HfO2 surfaces
Using the first-principles method within the generalized gradient approximation, we have
performed a systematic study on the structural and electronic properties of cubic HfO2 …
performed a systematic study on the structural and electronic properties of cubic HfO2 …
Theoretical study of Cs adsorption on GaN (0 0 0 1) surface
Y Du, B Chang, X Wang, J Zhang, B Li, M Wang - Applied Surface Science, 2012 - Elsevier
The adsorption characteristics and change in work function of Cs on a (2× 2) GaN (0001)
surface with a coverage from 1/4 to 1 monolayer (ML) have been investigated using density …
surface with a coverage from 1/4 to 1 monolayer (ML) have been investigated using density …