A review is presented of the properties of interdigitated metal-semiconductor-metal (MSM)
Schottky barrier photodetectors based on the InGaAs-InP material system, and the …

This review covers a spectrum of optoelectronic properties of and uses for semi-insulating
semiconductor heterostructures and thin films, including epilayers and quantum wells …

Infrared Detectors provides comprehensive coverage of this important aspect of infrared
technology, including details of recent research efforts directed toward improving the …

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

Metal-semiconductor-metal photodetectors (MSM PDs) with finger spacing and width as
small as 25 nm were fabricated on bulk and low-temperature (LT) grown GaAs and …

The first book to deal with the design and optimization of transistors made from strained
layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct …

The electrical behavior of metal–semiconductor–metal MSM Schottky barrier photodiode
structures is analyzed by means of current–voltage measurements at different temperatures …

Aluminum-gallium-nitride photodetectors were successfully fabricated with micrometer-scale
metal-semiconductor-metal structures and tested with ultrafast, UV laser pulses. The …

Solar-blind MSM-photodetectors based on the AlGaN/GaN heterostructutes grown by
MOCVD technology were fabricated and investigated. Directly on the MSM-diode we have …

A novel silicon photodetector suitable for high-speed, low-voltage operation at 780-to 850-
nm wavelengths is reported. It consists of an interdigitated pin detector fabricated on a …